发明公开
EP0609621A1 Method for determining thickness of chemical vapor deposited layers
失效
用于确定所述CVD层的厚度的方法，。
- 专利标题： Method for determining thickness of chemical vapor deposited layers
- 专利标题（中）： 用于确定所述CVD层的厚度的方法，。
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申请号： EP93309931.9申请日： 1993-12-09
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公开(公告)号： EP0609621A1公开(公告)日： 1994-08-10
- 发明人: Anthony, Thomas Richard , Fleischer, James Fulton , Woodruff, David Winfield
- 申请人： GENERAL ELECTRIC COMPANY
- 申请人地址： 1 River Road Schenectady, NY 12345 US
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： 1 River Road Schenectady, NY 12345 US
- 代理机构： Pratt, Richard Wilson
- 优先权： US991798 19921216
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C14/54 ; G01B11/06 ; C23C16/26 ; H01J37/32
摘要：
The thickness of a layer of material deposited by chemical vapor deposition, especially a diamond layer, is monitored by providing at least one substrate on which the material is deposited, with at least one perforation of a predetermined size therein. The relationship between the thickness of the layer formed in said perforation and the thickness of the layer formed on the substrate surface is determined, so that the thickness of the surface layer can be determined from the thickness of the layer formed in the perforation.
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