公开(公告)号：EP4511523A1

公开(公告)日：2025-02-26

申请号：EP23722259.1

申请日：2023-04-20

Applicant: Oerlikon Surface Solutions AG, Pfäffikon

Inventor： KRASSNITZER, Siegfried ,  GWEHENBERGER, Juergen ,  HAGMANN, Juerg ,  SCHMID, Martin ,  WIDMER, Dominik Erwin ,  KIRK, Matthew Paul ,  KERAUDY, Julien ,  GUIMOND, Sebastien ,  CONIFF, John

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C16/44 ,  H01J37/34 ,  C23C14/56 ,  H01J37/32

公开(公告)号：EP4510168A1

公开(公告)日：2025-02-19

申请号：EP23191516.6

申请日：2023-08-15

Applicant: Polyteknik A/S

Inventor： LARSEN, Jens William

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/54 ,  H01J37/34

Abstract: A temperature control system (1) for a wafer chuck, wherein said system comprises:
- a wafer chuck (10),
- a wafer pedestal (20),
- a rod (40), preferably made of bronze,
- a fluid container (50),
- a contact block (60), and
- at least one rail (30), preferably two rails,

wherein said wafer chuck (10) is assembled with the wafer pedestal (20), or wherein the wafer pedestal (20) is an integrated part of the wafer chuck (10), wherein the wafer chuck (10), when in use, is adapted for moving linearly back and forth on the least one rail (30),
wherein the rod (40) is in contact with the fluid container (50), or wherein the rod (40) forms a part of or is the fluid container (50), and
wherein the contact block (60) is in contact with:
- the rod (40), and
- the wafer pedestal (20).

公开(公告)号：EP3900087B1

公开(公告)日：2025-02-19

申请号：EP19900120.7

申请日：2019-12-20

Inventor： BRAUER, John Lionel

IPC: H01M4/70 ,  H01J37/02 ,  H05H1/24 ,  H01J37/32

公开(公告)号：EP4505604A1

公开(公告)日：2025-02-12

申请号：EP23785548.1

申请日：2023-04-03

Applicant: Comet Technologies USA, Inc.

Inventor： OLIVETI, Anthony ,  ROUGH, J. Kirkwood

IPC: H03K17/687 ,  H01J37/32 ,  H03H7/38

公开(公告)号：EP4490770A1

公开(公告)日：2025-01-15

申请号：EP23712371.6

申请日：2023-03-10

Applicant: LEYDENJAR TECHNOLOGIES B.V.

Inventor： KUDLACEK, Pavel ,  DIDDEN, Arjen

IPC: H01J37/32

公开(公告)号：EP4487366A1

公开(公告)日：2025-01-08

申请号：EP23707093.3

申请日：2023-02-28

Applicant: TRUMPF Huettinger Sp. Z o. o.

Inventor： KLIMCZAK, Andrzej ,  GIERALTOWSKI, Andrzej ,  BALCERAK, Michal

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C16/515 ,  H03K3/00 ,  H03K4/00

公开(公告)号：EP4487363A1

公开(公告)日：2025-01-08

申请号：EP23706650.1

申请日：2023-02-28

Applicant: TRUMPF Huettinger Sp. Z o. o.

Inventor： KLIMCZAK, Andrzej ,  GIERALTOWSKI, Andrzej ,  BALCERAK, Michal

IPC: H01J37/32 ,  H01J37/34 ,  H03K3/00 ,  H03K4/00 ,  C23C14/34

公开(公告)号：EP4487362A1

公开(公告)日：2025-01-08

申请号：EP23706649.3

申请日：2023-02-28

Applicant: TRUMPF Huettinger Sp. Z o. o.

Inventor： KLIMCZAK, Andrzej ,  GIERALTOWSKI, Andrzej ,  BALCERAK, Michal

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C16/515 ,  H03K3/00 ,  H03K4/00

公开(公告)号：EP4487360A1

公开(公告)日：2025-01-08

申请号：EP23706647.7

申请日：2023-02-28

Applicant: TRUMPF Huettinger Sp. Z o. o.

Inventor： KLIMCZAK, Andrzej ,  GIERALTOWSKI, Andrzej ,  BALCERAK, Michal

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C16/515 ,  H03K3/00 ,  H03K4/00

公开(公告)号：EP4485499A1

公开(公告)日：2025-01-01

申请号：EP23217249.4

申请日：2023-12-15

Applicant: SPTS Technologies Limited

Inventor： BEACHEY, Adam Sean

IPC: H01J37/32 ,  H01L21/67

Abstract: According to the invention there is provided a method of plasma etching a semiconductor substrate comprising the steps of:
positioning a semiconductor substrate on a substrate support within a chamber so that an upper surface of the semiconductor substrate can be exposed to the plasma etching and a lower surface of the semiconductor substrate is supported by the substrate support, wherein the substrate support comprises a bipolar electrostatic chuck ("ESC") and a cooling gas system for supplying a cooling gas to the lower surface at an associated pressure, and wherein the ESC comprises at least a first electrode and a second electrode;
plasma etching the semiconductor substrate; and
removing the semiconductor substrate from the substrate support after the plasma etching step is completed;
in which, during the plasma etching step: a cooling gas is supplied to the lower surface of the semiconductor substrate at an associated pressure; the ESC is switched between a first bipolar mode of operation in which a positive voltage is applied to the first electrode and a negative voltage is applied to the second electrode, and a second bipolar mode of operation in which a negative voltage is applied to the first electrode and a positive voltage is applied to the second electrode; and the pressure of the cooling gas is reduced when the ESC is switched between the first and second bipolar modes of operation with respect to the pressure at other times during the plasma etching step so that the semiconductor substrate remains positioned on the substrate support.