发明公开
- 专利标题： Lateral MOSFET with contact structure
- 专利标题（中）： 横向MOSFET与接触结构。
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申请号： EP94303417.3申请日： 1994-05-12
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公开(公告)号： EP0624909A3公开(公告)日： 1995-09-20
- 发明人: Williams, Richard K.
- 申请人： SILICONIX Incorporated
- 申请人地址： 2201 Laurelwood Road Santa Clara California 95054 US
- 专利权人： SILICONIX Incorporated
- 当前专利权人： SILICONIX Incorporated
- 当前专利权人地址： 2201 Laurelwood Road Santa Clara California 95054 US
- 代理机构： Jones, Ian
- 优先权： US62507 19930514
- 主分类号： H01L29/784
- IPC分类号： H01L29/784 ; H01L29/52 ; H01L23/522
摘要：
A geometry for the metal contacts in a lateral MOSFET is disclosed. The cross-sectional shape of the metal contacts, which is usually six-sided but may also be a parallelogram, maximizes the cross-sectional area of the contacts while maintaining a required clearance from the gate layer and a required overhang of the lines in an overlying metal layer.
公开/授权文献
- EP0624909B1 Lateral MOSFET with contact structure 公开/授权日：1999-04-14
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