发明公开
EP0628998A1 Wiring layer for semi conductor device and method for manufacturing the same
失效
VerbindungsschichtfürHalbleiterbauelement und Verfahren zu ihrer Herstellung。
- 专利标题： Wiring layer for semi conductor device and method for manufacturing the same
- 专利标题（中）： VerbindungsschichtfürHalbleiterbauelement und Verfahren zu ihrer Herstellung。
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申请号： EP94108251.3申请日： 1994-05-27
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公开(公告)号： EP0628998A1公开(公告)日： 1994-12-14
- 发明人: Miyata, Masahiro, c/o Intellectual Property Div. , Ezawa, Hirokazu, c/o Intellectual Property Div. , Ogure, Naoaki, c/o Intellectual Property Div. , Tsujimura, Manabu, c/o Intellectual Property Div. , Ohdaira, Takeyuki , Inoue, Hiroaki , Ikeda, Yukio
- 申请人： KABUSHIKI KAISHA TOSHIBA , EBARA CORPORATION
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA,EBARA CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,EBARA CORPORATION
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Ritter und Edler von Fischern, Bernhard, Dipl.-Ing.
- 优先权： JP127117/93 19930528; JP60933/94 19940330
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/90
摘要：
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film (12) is deposited on a silicon substrate (11), and a concave groove (13) is formed in the insulating film (12) in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film (12) to form a titanium film (14) and a palladium film (15), respectively. A silver film (16) is formed on the palladium film (15) by electroplating, and a groove-shaped silver wiring layer (17) is formed by polishing. The resultant structure is annealed at a temperature of about 700°C, and an intermetallic compound (18) is formed by alloying the titanium film (14) and palladium film (15) with each other. Consequently, a burying type wiring layer (19) whose resistance is lower than that of aluminum, is constituted by the silver wiring layer (17) and intermetallic compound (18).
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