公开(公告)号：EP0628998A1

公开(公告)日：1994-12-14

申请号：EP94108251.3

申请日：1994-05-27

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Miyata, Masahiro, c/o Intellectual Property Div. ,  Ezawa, Hirokazu, c/o Intellectual Property Div. ,  Ogure, Naoaki, c/o Intellectual Property Div. ,  Tsujimura, Manabu, c/o Intellectual Property Div. ,  Ohdaira, Takeyuki ,  Inoue, Hiroaki ,  Ikeda, Yukio

IPC分类号： H01L23/532 ,  H01L21/90

CPC分类号： H01L21/76873 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film (12) is deposited on a silicon substrate (11), and a concave groove (13) is formed in the insulating film (12) in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film (12) to form a titanium film (14) and a palladium film (15), respectively. A silver film (16) is formed on the palladium film (15) by electroplating, and a groove-shaped silver wiring layer (17) is formed by polishing. The resultant structure is annealed at a temperature of about 700°C, and an intermetallic compound (18) is formed by alloying the titanium film (14) and palladium film (15) with each other. Consequently, a burying type wiring layer (19) whose resistance is lower than that of aluminum, is constituted by the silver wiring layer (17) and intermetallic compound (18).

摘要翻译： 在根据本发明的半导体器件及其制造方法中，例如，在硅衬底（11）上淀积绝缘膜（12），在绝缘膜上形成凹槽（13） 12）。 钛和钯依次沉积在绝缘膜（12）上以分别形成钛膜（14）和钯膜（15）。 通过电镀在钯膜（15）上形成银膜（16），通过研磨形成槽状的银布线层（17）。 所得结构在约700℃的温度下退火，并通过使钛膜（14）和钯膜（15）相互合金形成金属间化合物（18）。 因此，电阻比铝低的掩埋型布线层（19）由银布线层（17）和金属间化合物（18）构成。

公开(公告)号：EP0628998B1

公开(公告)日：2000-07-26

申请号：EP94108251.3

申请日：1994-05-27

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Miyata, Masahiro, c/o Intellectual Property Div. ,  Ezawa, Hirokazu, c/o Intellectual Property Div. ,  Ogure, Naoaki, c/o Intellectual Property Div. ,  Tsujimura, Manabu, c/o Intellectual Property Div. ,  Ohdaira, Takeyuki ,  Inoue, Hiroaki ,  Ikeda, Yukio

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76873 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/00