A method of producing a semiconducting material comprises subjecting a selected class of hydrosilane compounds to hydrogenative condensation in the presence of a catalyst comprising at least one of metals or metal compounds of Group 3B-Group 7B or Group 8 of the Periodic Table, a mixture thereof with a specified silyl compound and/or a specified metal hydride. The resulting condensate is dissolved in a suitable solvent and cast over a quartz or stainless steel substrate, or a silicone wafer to provide a thin film having a specified conductivity and a specified optical band-gap (Eo).