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16 条记录 (耗时 0.012 秒)

    Process for producing polysilanes
    1.
    发明公开
    Process for producing polysilanes 失效
    生产多晶硅的方法

    公开(公告)号：EP0551771A3

    公开(公告)日：1993-10-13

    申请号：EP92311867.3

    申请日：1992-12-30

    申请人： NIPPON OIL CO. LTD.

    发明人： Ikai, Keizo ,  Minami, Masaki ,  Matsuno, Mitsuo

    IPC分类号： C08G77/60

    CPC分类号： C08G77/60

    摘要： Polysilanes are produced from hydrosilanes using as a catalyst a mixture of a specific metallocene compound and either a specific silyl compound or a specific metallic hydride. This invention can efficiently provide a polysilane having a higher degree of polymerization than when using a known catalyst.

    A method of producing a semiconducting material
    5.
    发明公开
    A method of producing a semiconducting material 失效
    一种制造半导体材料的方法

    公开(公告)号：EP0630933A3

    公开(公告)日：1995-08-30

    申请号：EP94304253.1

    申请日：1994-06-13

    申请人： NIPPON OIL CO. LTD.

    发明人： Ikai, Keizo ,  Matsuno, Mitsuo ,  Minami, Masaki

    IPC分类号： C08G77/60

    CPC分类号： H01B1/06 ,  C08G77/60 ,  H01B1/04 ,  H01L51/0094

    摘要： A method of producing a semiconducting material comprises subjecting a selected class of hydrosilane compounds to hydrogenative condensation in the presence of a catalyst comprising at least one of metals or metal compounds of Group 3B-Group 7B or Group 8 of the Periodic Table, a mixture thereof with a specified silyl compound and/or a specified metal hydride. The resulting condensate is dissolved in a suitable solvent and cast over a quartz or stainless steel substrate, or a silicone wafer to provide a thin film having a specified conductivity and a specified optical band-gap (Eo).

    摘要翻译： 生产半导体材料的方法包括使选定类别的氢硅烷化合物在包含周期表第3B族第7B族或第8族的金属或金属化合物，它们的混合物中的至少一种的催化剂存在下进行氢化缩合 与指定的甲硅烷基化合物和/或指定的金属氢化物反应。 将得到的冷凝物溶解在合适的溶剂中并流延在石英或不锈钢基底或硅酮晶片上以提供具有特定电导率和特定光学带隙（E 0）的薄膜。

    Epoxy resins and process for producing same
    6.
    发明公开
    Epoxy resins and process for producing same 失效
    环氧树脂及其生产方法

    公开(公告)号：EP0531175A3

    公开(公告)日：1993-04-21

    申请号：EP92308090.7

    申请日：1992-09-07

    申请人： NIPPON OIL CO. LTD.

    发明人： Kobayashi, Masaaki ,  Ikai, Keizo ,  Matsuno, Mitsuo

    IPC分类号： C08G65/08 ,  C08G75/08 ,  C08G59/02 ,  C08G59/32

    CPC分类号： C07D303/22 ,  C07D409/04 ,  C08G59/3218 ,  C08G59/3254 ,  C08G65/08 ,  C08G75/08

    摘要： A novel epoxy resin containing a norbornane ring is formed by polymerizing a norbornane compound containing an epoxy group in the ring and an epoxyethyl or epithioethyl group bound to the ring. This epoxy resin can be cured in a usual manner. The cured product is, because of the norbornane skeleton, excellent in hardness and strength and low in moisture absorption. Compared to an epoxy resin having an aromatic ring, said epoxy resin is excellent in electrical characteristics since it is free from Na, Cl, etc., and is suited for use in sealing materials of LSI, etc. The compound containing the epithioethyl group is high in refractive index because of the epithioethyl group and can be used also in the optical field.

    Epoxy resins and process for producing same
    7.
    发明公开
    Epoxy resins and process for producing same 失效
    Epoxydharz und Verfahren zu ihrer Herstellung。

    公开(公告)号：EP0531175A2

    公开(公告)日：1993-03-10

    申请号：EP92308090.7

    申请日：1992-09-07

    申请人： NIPPON OIL CO. LTD.

    发明人： Kobayashi, Masaaki ,  Ikai, Keizo ,  Matsuno, Mitsuo

    IPC分类号： C08G65/08 ,  C08G75/08 ,  C08G59/02 ,  C08G59/32

    CPC分类号： C07D303/22 ,  C07D409/04 ,  C08G59/3218 ,  C08G59/3254 ,  C08G65/08 ,  C08G75/08

    摘要： A novel epoxy resin containing a norbornane ring is formed by polymerizing a norbornane compound containing an epoxy group in the ring and an epoxyethyl or epithioethyl group bound to the ring.
    This epoxy resin can be cured in a usual manner. The cured product is, because of the norbornane skeleton, excellent in hardness and strength and low in moisture absorption. Compared to an epoxy resin having an aromatic ring, said epoxy resin is excellent in electrical characteristics since it is free from Na, Cl, etc., and is suited for use in sealing materials of LSI, etc. The compound containing the epithioethyl group is high in refractive index because of the epithioethyl group and can be used also in the optical field.

    摘要翻译： 含有降冰片烷环的新型环氧树脂通过在环中聚合含有环氧基的降冰片烷基化合物和与环结合的环氧乙基或环硫乙基形成。 该环氧树脂可以以通常的方式固化。 由于降冰片烷骨架，固化物的硬度和强度优异，吸湿性低。 与具有芳环的环氧树脂相比，所述环氧树脂由于不含Na，Cl等而具有优异的电特性，并且适用于LSI等的密封材料。含有硫代乙基的化合物为 由于具有环氧乙基的折射率高，也可用于光学领域。

    Photovoltaic element
    9.
    发明公开
    Photovoltaic element 失效
    光伏电池Bauelement

    公开(公告)号：EP0717451A2

    公开(公告)日：1996-06-19

    申请号：EP95850228.8

    申请日：1995-12-14

    申请人： NIPPON OIL CO., LTD.

    发明人： Ikai, Keizo ,  Shiozaki, Iwane ,  Minami, Masaki ,  Matsuno, Mitsuo

    IPC分类号： H01L31/18 ,  H01L51/20 ,  H01L51/30

    CPC分类号： H01L51/42 ,  H01L51/0026 ,  H01L51/004 ,  H01L51/0094 ,  Y02E10/549 ,  Y02P70/521

    摘要： A photovoltaic element produced from a product resulting from decomposition of a silicon polymer having an organic substituent of the group consisting of a hydrocarbon group, a halogenated hydrocarbon group and a silyl group R 3 R 4 R 5 Si- (wherein R 3 - R 5 each are identical or different, including C 1 - C 8 alkyl groups and C 6 - C 10 aryl groups). The inventive photovoltaic element is substantially pollution-free and capable of quantity production at a relatively large unit size.

    摘要翻译： 由由具有由烃基，卤代烃基和甲硅烷基R 3 R 4 R 5（其中有机取代基组成的组的硅聚合物）分解形成的产物产生的光电元件R 3 R 5 Si-（ 其中R 3 -R 5各自相同或不同，包括C 1 -C 8烷基和C 6 -C 10芳基）。 本发明的光电元件基本上是无污染的，并且能够以相对较大的单位尺寸量产。

    A method of producing a semiconducting material
    10.
    发明公开
    A method of producing a semiconducting material 失效
    韦尔法罕zur Herstellung eines Halbleitermaterials。

    公开(公告)号：EP0632086A2

    公开(公告)日：1995-01-04

    申请号：EP94304431.3

    申请日：1994-06-17

    申请人： NIPPON OIL CO., LTD.

    发明人： Ikai, Keizo ,  Matsuno, Mitsuo ,  Minami, Masaki

    IPC分类号： C08G77/60

    CPC分类号： C08G77/60 ,  H01B1/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628 ,  H01L51/0094

    摘要： A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.

    摘要翻译： 制备半导体材料的方法包括在惰性溶剂中使一种或多种卤代硅烷与碱金属和/或碱土金属反应以产生冷凝物并热分解冷凝物。 将冷凝物溶解在合适的溶剂如甲苯和四氢呋喃中，并通过流延将其施加到合适的底物上。 其形成的半导体材料的光学带隙（EO）通常为0.1-4.0eV。