发明公开
EP0631997A1 Silicon nitride based sintered body and method for producing the same
失效
基于氮化硅和方法，用于其生产的烧结模制品。
- 专利标题： Silicon nitride based sintered body and method for producing the same
- 专利标题（中）： 基于氮化硅和方法，用于其生产的烧结模制品。
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申请号： EP94304801.7申请日： 1994-06-30
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公开(公告)号： EP0631997A1公开(公告)日： 1995-01-04
- 发明人: Matsuura, Takashi, c/o Itami Works of , Yamakawa, Akira, c/o Itami Works of , Miyake, Masaya, c/o Itami Works of
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： 5-33, Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541 JP
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： 5-33, Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541 JP
- 代理机构： Warren, Anthony Robert
- 优先权： JP187348/93 19930630; JP155223/94 19940613
- 主分类号： C04B35/584
- IPC分类号： C04B35/584 ; C04B35/64
摘要：
The invention relates to a silicon nitride based sintered body composed only of uniform, fine crystal grains, which possesses improved strength and fracture toughness in the middle and low temperature ranges. A crystalline silicon nitride powder composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as the material powder. The silicon nitride powder is sintered at a temperature of 1200°C to 1400°C or sintered with a product of sintering temperature (°C) and sintering time (sec) below 600000 (°C·sec) at a temperature of 1400°C to 1900°C. Thus, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.
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