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    Planar squid of oxide superconductor
    4.
    发明公开
    Planar squid of oxide superconductor 失效
    Planares Quanteninterferometer mit Oxyd-Supraleiter。

    公开(公告)号：EP0566499A2

    公开(公告)日：1993-10-20

    申请号：EP93400993.7

    申请日：1993-04-16

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Matsuura, Takashi, c/o Itami Works of ,  Itozaki, Hideo c/o Itami Works of

    IPC分类号： G01R33/035

    CPC分类号： G01R33/0358 ,  Y10S505/702 ,  Y10S505/832 ,  Y10S505/846 ,  Y10S505/874 ,  Y10S505/922

    摘要： A SQUID comprises a substrate, a washer of an oxide superconductor thin film formed on a principal surface of the substrate, a hole shaped a similar figure to the washer at the center of the washer, a slit formed between one side of the washer and the hole, and a Josephson junction which connects portions of the washer at the both sides of the slit across the slit. In the SQUID, the ratio of similarity of the washer to the hole ranges 100 to 2500.

    摘要翻译： SQUID包括基板，形成在基板的主表面上的氧化物超导体薄膜的垫圈，与垫圈中心处的垫圈相似的孔，在垫圈的一侧和 孔和约瑟夫逊结，该连接部将切口两侧的垫圈的部分连接在狭缝上。 在SQUID中，洗衣机与孔的相似度的比率范围为100至2500.

    Josephson junction device of oxide superconductor and process for preparing the same
    5.
    发明公开
    Josephson junction device of oxide superconductor and process for preparing the same 失效
    氧化物超导体的约瑟夫逊结器件及其制备方法

    公开(公告)号：EP0557207A1

    公开(公告)日：1993-08-25

    申请号：EP93400442.5

    申请日：1993-02-19

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Tanaka, Saburo, c/o Itami Works of ,  Matsuura, Takashi, c/o Itami Works of ,  Itozaki, Hideo, c/o Itami Works of

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/225

    摘要： A Josephson junction device comprises a substrate and an oxide superconductor thin film formed on a principal surface of the substrate. The oxide superconductor thin film includes two portions constituted of single crystals of the oxide superconductor, one of which is composed of a -axis orientated single crystal of the oxide superconductor and the other of which is composed of c -axis orientated single crystal of the oxide superconductor, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.

    摘要翻译： 约瑟夫森结器件包括衬底和形成在衬底的主表面上的氧化物超导体薄膜。 氧化物超导体薄膜包括由氧化物超导体的单晶构成的两个部分，其中一个由氧化物超导体的a轴取向单晶组成，另一个由氧化物超导体的c轴取向单晶组成 超导体以及所述两部分之间的晶界，这构成了约瑟夫逊结的薄弱环节。

    Silicon nitride based sintered body and method for producing the same
    6.
    发明公开
    Silicon nitride based sintered body and method for producing the same 失效
    基于氮化硅和方法，用于其生产的烧结模制品。

    公开(公告)号：EP0631997A1

    公开(公告)日：1995-01-04

    申请号：EP94304801.7

    申请日：1994-06-30

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Matsuura, Takashi, c/o Itami Works of ,  Yamakawa, Akira, c/o Itami Works of ,  Miyake, Masaya, c/o Itami Works of

    IPC分类号： C04B35/584 ,  C04B35/64

    CPC分类号： C04B35/64 ,  C04B35/584

    摘要： The invention relates to a silicon nitride based sintered body composed only of uniform, fine crystal grains, which possesses improved strength and fracture toughness in the middle and low temperature ranges. A crystalline silicon nitride powder composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as the material powder. The silicon nitride powder is sintered at a temperature of 1200°C to 1400°C or sintered with a product of sintering temperature (°C) and sintering time (sec) below 600000 (°C·sec) at a temperature of 1400°C to 1900°C. Thus, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

    摘要翻译： 本发明涉及只均匀组成的氮化硅烧结体中，微细晶粒，其具有改进的在中间和低温度范围内的强度和断裂韧性。 晶粒中的长轴径的组成的结晶质氮化硅粉末是不超过200nm或非晶质氮化硅粉末被用作原料粉末。 氮化硅粉末在1200℃至1400℃的温度下在1400℃的温度下烧结或随烧结温度（℃）和低于600 000（DEG C.sec）烧结时间（秒）的乘积烧结 至1900℃。因此，氮化硅基烧结体，其特征氮化硅和/或硅铝氧氮晶体的较长轴直径不大于200nm被获得。

    Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material
    9.
    发明公开
    Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material 失效
    一种用于在氧化物复合材料的超导组成的约瑟夫森器件的制造型隧道结的方法。

    公开(公告)号：EP0494830A2

    公开(公告)日：1992-07-15

    申请号：EP92400070.6

    申请日：1992-01-10

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Matsuura, Takashi, c/o Itami Works of ,  Tanaka, Saburo, c/o Itami Works of ,  Itozaki, Hideo, c/o Itami Works of

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2496 ,  Y10S505/702

    摘要： For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200°C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.

    摘要翻译： 对于制造具有形成夹在一对氧化物超导体薄膜之间的非常薄的绝缘体层的隧道结的超导装置中，氧化物超导体薄膜的第一超导层被形成在一个基片，和一个的MgO薄膜被沉积在 在不高于200℃。的MgO薄膜的基板温度的第一超导层被热处理，从而没有所沉积的MgO薄膜的结晶性提高，并且此后，氧化物超导体薄膜的第二超导层被形成在 在MgO薄膜。