In a buried type semiconductor laser device composed of a II-VI compound semiconductor, a buried layer 9 - 11 is made of a II-VI compound semiconductor having a refraction factor lower than that of an active layer of the laser device. The buried layer has a forbidden band width larger than that of an active layer of the laser device. The buried layer has such a composition that the lattice constant thereof is substantially matched to that of a substrate on which the laser device is grown. The buried layer has an electric resistance high enough not to exert an effect on the operation of the laser composed of an n-type clad-active layer-a p-type clad.