公开(公告)号：EP0316909A3

公开(公告)日：1990-08-08

申请号：EP88119130.8

申请日：1988-11-17

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Uda, Tsuyoshi ,  Kanehisa, Osam ,  Shiiki, Masatoshi

IPC分类号： H01L31/02 ,  G11C13/04

CPC分类号： B82Y20/00 ,  G11C7/005 ,  H01L31/035236

摘要： A semiconductor optical apparatus of the invention has a quantum well super-lattice structure consisting of only a direct transition semiconductor or both of a direct transition semiconductor and an indirect transition semiconductor. In the semicondcutor optical apparatus of the invention, by using an absorp­tion saturation phenomenon of excitons in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase informatin at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.

公开(公告)号：EP0637862A2

公开(公告)日：1995-02-08

申请号：EP94111892.9

申请日：1994-07-29

申请人： HITACHI, LTD.

发明人： Goto, Jun ,  Migita, Masahito ,  Taike, Akira, No. 7, Hitachi ,  Momose, Masayuki ,  Nakatsuka, Shin'ichi

IPC分类号： H01S3/19 ,  H01L33/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0087 ,  H01L33/28 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2211 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/327 ,  H01S5/3406 ,  H01S5/3409 ,  H01S5/3422 ,  H01S5/347

摘要： In a buried type semiconductor laser device composed of a II-VI compound semiconductor, a buried layer 9 - 11 is made of a II-VI compound semiconductor having a refraction factor lower than that of an active layer of the laser device. The buried layer has a forbidden band width larger than that of an active layer of the laser device. The buried layer has such a composition that the lattice constant thereof is substantially matched to that of a substrate on which the laser device is grown. The buried layer has an electric resistance high enough not to exert an effect on the operation of the laser composed of an n-type clad-active layer-a p-type clad.

公开(公告)号：EP0267377B1

公开(公告)日：1993-02-03

申请号：EP87111826.1

申请日：1987-08-14

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Kanehisa, Osam ,  Shiiki, Masatoshi ,  Yamamoto, Hajime

IPC分类号： H05B33/10 ,  H05B33/14

CPC分类号： H05B33/145 ,  H05B33/10

公开(公告)号：EP0380106A2

公开(公告)日：1990-08-01

申请号：EP90101517.2

申请日：1990-01-25

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Taike, Akira, c/o Hitachi Daini Kyoshinryo ,  Shiiki, Masatoshi

IPC分类号： H01L33/00 ,  H01S3/19 ,  H01L21/363 ,  H01L21/365

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/06 ,  H01S5/327 ,  H01S5/347

摘要： A semiconductor emitting device capable of emitting blue light comprises a first clad layer (20), an active layer (21) and a second clad layer (22), successively formed on a semi­conductor substrate (15), where a nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a resistivity of not more than 10 Ω-cm is used as the first or the second clad layer (20, 22).

摘要翻译： 能够发射蓝光的半导体发射器件包括依次形成在半导体衬底（15）上的第一覆盖层（20），有源层（21）和第二覆盖层（22） 作为载流子浓度不小于1×10 6 cm -3的低电阻率ZnSe型ZnSSe薄膜，电阻率不大于10ΩEGA-cm作为第一或第 第二包层（20,22）。

公开(公告)号：EP0316909A2

公开(公告)日：1989-05-24

申请号：EP88119130.8

申请日：1988-11-17

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Uda, Tsuyoshi ,  Kanehisa, Osam ,  Shiiki, Masatoshi

IPC分类号： H01L31/02 ,  G11C13/04

CPC分类号： B82Y20/00 ,  G11C7/005 ,  H01L31/035236

摘要： A semiconductor optical apparatus of the invention has a quantum well super-lattice structure consisting of only a direct transition semiconductor or both of a direct transition semiconductor and an indirect transition semiconductor. In the semicondcutor optical apparatus of the invention, by using an absorp­tion saturation phenomenon of excitons in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase informatin at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.

摘要翻译： 本发明的半导体光学装置具有仅由直接跃迁半导体或直接跃迁半导体和间接跃迁半导体两者组成的量子阱超晶格结构。 在本发明的半切割光学装置中，通过在构成量子阱超晶格结构的直接跃迁半导体中使用激子的吸收饱和现象，能够高速记录，再现和擦除信息的非易失性信息记录装置 即使在室温下甚至通过照射低强度的光也能实现。

公开(公告)号：EP0380106B1

公开(公告)日：1997-11-05

申请号：EP90101517.2

申请日：1990-01-25

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Taike, Akira, c/o Hitachi Daini Kyoshinryo ,  Shiiki, Masatoshi

IPC分类号： H01L33/00 ,  H01S3/19 ,  H01L21/363 ,  H01L21/365

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/06 ,  H01S5/327 ,  H01S5/347

公开(公告)号：EP0316909B1

公开(公告)日：1996-02-07

申请号：EP88119130.8

申请日：1988-11-17

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Uda, Tsuyoshi ,  Kanehisa, Osam ,  Shiiki, Masatoshi

IPC分类号： H01L31/02 ,  G11C13/04

CPC分类号： B82Y20/00 ,  G11C7/005 ,  H01L31/035236

公开(公告)号：EP0637862A3

公开(公告)日：1995-05-24

申请号：EP94111892.9

申请日：1994-07-29

申请人： HITACHI, LTD.

发明人： Goto, Jun ,  Migita, Masahito ,  Taike, Akira, No. 7, Hitachi ,  Momose, Masayuki ,  Nakatsuka, Shin'ichi

IPC分类号： H01S3/19 ,  H01L33/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0087 ,  H01L33/28 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2211 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/327 ,  H01S5/3406 ,  H01S5/3409 ,  H01S5/3422 ,  H01S5/347

摘要： In a buried type semiconductor laser device composed of a II-VI compound semiconductor, a buried layer 9 - 11 is made of a II-VI compound semiconductor having a refraction factor lower than that of an active layer of the laser device. The buried layer has a forbidden band width larger than that of an active layer of the laser device. The buried layer has such a composition that the lattice constant thereof is substantially matched to that of a substrate on which the laser device is grown. The buried layer has an electric resistance high enough not to exert an effect on the operation of the laser composed of an n-type clad-active layer-a p-type clad.

摘要翻译： 在由II-VI族化合物半导体构成的埋入型半导体激光装置中，埋入层9-11由折射率低于激光装置的活性层的II-VI族化合物半导体构成。 埋层的禁带宽度大于激光器件的有源层的禁带宽度。 掩埋层具有这样的组成，即其晶格常数基本上与其上生长有激光器件的衬底的晶格常数相匹配。 掩埋层具有足够高的电阻而不会对由n型包覆有源层-p型包层构成的激光器的操作产生影响。

公开(公告)号：EP0380106A3

公开(公告)日：1991-09-18

申请号：EP90101517.2

申请日：1990-01-25

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Taike, Akira, c/o Hitachi Daini Kyoshinryo ,  Shiiki, Masatoshi

IPC分类号： H01L33/00 ,  H01S3/19 ,  H01L21/363 ,  H01L21/365

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/06 ,  H01S5/327 ,  H01S5/347

摘要： A semiconductor emitting device capable of emitting blue light comprises a first clad layer (20), an active layer (21) and a second clad layer (22), successively formed on a semi­conductor substrate (15), where a nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a resistivity of not more than 10 Ω-cm is used as the first or the second clad layer (20, 22).

公开(公告)号：EP0267377A1

公开(公告)日：1988-05-18

申请号：EP87111826.1

申请日：1987-08-14

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Kanehisa, Osam ,  Shiiki, Masatoshi ,  Yamamoto, Hajime

IPC分类号： H05B33/10 ,  H05B33/14

CPC分类号： H05B33/145 ,  H05B33/10

摘要： A multi-color single layer electroluminescent display apparatus comprising a illuminant layer (27) having been interposed between a pair of electrode layers (28) and having a plurality of activators doped at spacially differ ent locations is disclosed. A process for producing an electroluminescent display apparatus comprising doping with a plurality of activators at spacially different locations on forming a illuminant layer is also disclosed.

摘要翻译： 公开了一种多色单层电致发光显示装置，其包括已经插入在一对电极层（28）之间并具有在空间上不同位置掺杂的多个活化剂的发光层（27）。 还公开了一种制造电致发光显示装置的方法，该方法包括在形成发光体层时在空间上不同的位置掺杂​​多个激活器。