发明公开
EP0712945A1 Method and apparatus for recharging of silicon granules in Czochralski single crystal growing
失效
Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung
- 专利标题: Method and apparatus for recharging of silicon granules in Czochralski single crystal growing
- 专利标题(中): Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung
-
申请号: EP95117746.8申请日: 1995-11-10
-
公开(公告)号: EP0712945A1公开(公告)日: 1996-05-22
- 发明人: Nagai, Naoki , Oda, Michiaki , Ohtsuka, Seiichiro , Harada, Isamu
- 申请人: SHIN-ETSU HANDOTAI COMPANY LIMITED
- 申请人地址: 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo JP
- 专利权人: SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人: SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人地址: 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo JP
- 代理机构: Fuchs, Luderschmidt & Partner Patentanwälte
- 优先权: JP286246/94 19941121
- 主分类号: C30B15/02
- IPC分类号: C30B15/02
摘要:
The invention provides an improvement in a recharger system consisting of a feeder and a feed conduit for recharging polycrystalline silicon granules into the crucible after a run of growing a single crystal silicon rod by the Czochralski method so as to prepare for the next run of crystal growing. The improvement comprises controlling the amount of holdup of the silicon granules in the feed conduit by means of a sensor provided on the feed conduit so as to ensure smooth and high-rate feed of the silicon granules in such a way that the feed rate of the silicon granules from the feeder to the feed conduit and/or the descending velocity of the crucible can be controlled by the signals generated in the sensor corresponding to the amount of the holdup in the feed conduit.
公开/授权文献
信息查询
IPC分类: