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    Method and apparatus for recharging of silicon granules in Czochralski single crystal growing
    1.
    发明公开
    Method and apparatus for recharging of silicon granules in Czochralski single crystal growing 失效
    Verfahren und Vorrichtung zur Nachchargierung Silizium-Granulat in der Czochralski-Einkristallzüchtung

    公开(公告)号：EP0712945A1

    公开(公告)日：1996-05-22

    申请号：EP95117746.8

    申请日：1995-11-10

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Nagai, Naoki ,  Oda, Michiaki ,  Ohtsuka, Seiichiro ,  Harada, Isamu

    IPC分类号： C30B15/02

    CPC分类号： C30B15/02 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1056

    摘要： The invention provides an improvement in a recharger system consisting of a feeder and a feed conduit for recharging polycrystalline silicon granules into the crucible after a run of growing a single crystal silicon rod by the Czochralski method so as to prepare for the next run of crystal growing. The improvement comprises controlling the amount of holdup of the silicon granules in the feed conduit by means of a sensor provided on the feed conduit so as to ensure smooth and high-rate feed of the silicon granules in such a way that the feed rate of the silicon granules from the feeder to the feed conduit and/or the descending velocity of the crucible can be controlled by the signals generated in the sensor corresponding to the amount of the holdup in the feed conduit.

    摘要翻译： 本发明提供了一种充电器系统的改进，该充电器系统包括一个馈电器和一个馈电管道，用于在通过切克劳斯基法（Czochralski）方法生长单晶硅棒之后将多晶硅颗粒再次充入坩埚中，以准备下一次晶体生长 。 该改进包括通过设置在进料导管上的传感器来控制进料管中的硅颗粒的滞留量，以便确保硅颗粒的平滑和高速进料，使得颗粒的进料速率 来自进料器的硅颗粒和/或坩埚的下降速度可以通过在传感器中产生的信号来控制，该信号对应于进料管道中的滞留量。

    Crystal pulling apparatus
    3.
    发明公开
    Crystal pulling apparatus 失效
    Kristallziehvorrichtung

    公开(公告)号：EP0781870A2

    公开(公告)日：1997-07-02

    申请号：EP96309330.7

    申请日：1996-12-20

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Ozaki, Atsushi ,  Urano, Masahiko ,  Harada, Isamu ,  Kakegawa, Tomohiro ,  Nakano, Hideki

    IPC分类号： C30B15/14

    CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.

    摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体牵引装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主系统不可能在坩埚内加热材料熔体，也可以防止材料熔融变硬化。

    Method of manufacturing silicon moncrystal using continuous czochralski method
    4.
    发明公开
    Method of manufacturing silicon moncrystal using continuous czochralski method 失效
    维尔法赫恩·祖尔·赫斯特伦

    公开(公告)号：EP0792952A1

    公开(公告)日：1997-09-03

    申请号：EP97301179.4

    申请日：1997-02-24

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Nagai, Naoki ,  Harada, Isamu ,  Oda, Michiaki

    IPC分类号： C30B15/02 ,  C30B15/22 ,  C30B29/06

    CPC分类号： C30B15/22 ,  C30B15/02 ,  Y10T117/1068

    摘要： In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon-melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.

    摘要翻译： 在使用连续的切克劳斯基法制造单晶硅的方法中，将硅材料供给到坩埚中，从坩埚中的硅熔体中拉出硅单晶。 硅材料的供给被悬浮直到硅熔体的温度分布在直体形成工艺开始之后变得稳定，并且当硅熔体的温度分布变得稳定时，硅材料的供应开始。 硅材料的进料速率逐渐增加，直到供料速率等于硅材料供应已经开始之后硅熔体的凝固速率。 该方法在制造时防止硅单晶成为多晶体。

    Method for feeding granular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
    5.
    发明公开
    Method for feeding granular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal 失效
    供应粒状硅，进料管线和用于制造硅单晶的方法的方法

    公开(公告)号：EP0787837A1

    公开(公告)日：1997-08-06

    申请号：EP97300713.1

    申请日：1997-02-05

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Nagai, Naoki ,  Harada, Isamu ,  Tashiro, Chihiro ,  Oda, Michiaki

    IPC分类号： C30B15/02

    CPC分类号： C30B15/02

    摘要： In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granular silicon material from the feeder to the feed pipe is repeatedly commenced and stopped so as to maintain the stagnation of the granular silicon material. The feed rate of the granular silicon material from the feeder to the feed pipe is increased with time until the feed of the silicon material is completed. This prevents abrasion of a coating or lining provided on the inner surface of the feeder and also prevents damage of the feeder. In a pulling apparatus operated according to the Czochralski method, after causing granular silicon material to stagnate in the feed pipe, the crucible is lowered or the feed pipe is raised, while the stagnation of the granular silicon material is maintained, so as to form an unmolten layer of the granular silicon material on the molten or solidified surface of the silicon melt. The unmolten layer is then melted, and the granular silicon material is fed onto the unmolten layer through the feed pipe while the stagnation of the granular silicon material in the feed pipe is maintained. Accordingly, silicon material can be recharged without damaging the crucible, so that productivity and manufacturing yield of silicon monocrystals can be improved.

    摘要翻译： 在一个提拉装置操作gemäß到多提拉法或CCZ方法，粒状硅原料首先被馈送到进料管从进料器，以便形成在进料管中的粒状硅原料的停滞。 从进料器到进料管中的粒状硅原料的供给反复开始和停止，以保持粒状硅原料的停滞。 从进料器到进料管中的粒状硅原料的供料速率随时间增加，直到硅材料的供给结束。 这防止提供给料器的内表面上的涂层或衬里的磨损，从而防止供纸器的损坏。 在一个提拉装置操作雅丁到提拉法，引起粒状硅原料在进料管停滞后，坩埚下降或进料管被升高，而粒状硅原料的停滞被保持，以便形成在 硅熔体的熔融或固化表面上的粒状硅原料的未熔融层。 然后未熔融层被熔化，并且粒状硅原料被供给到通过供料管的未熔融层，而在进料管中的粒状硅原料的停滞被维持。 因此，有机硅材料可以在不损坏坩埚被再充电，如此做了生产率和硅单晶的制造成品率得以提高。