发明公开
EP0741406A2 Laser assisted plasma chemical etching apparatus and method
失效
Vorrichtung und Verfahren zumlaserunterstütztenchemischenPlasmaätzen
- 专利标题： Laser assisted plasma chemical etching apparatus and method
- 专利标题（中）： Vorrichtung und Verfahren zumlaserunterstütztenchemischenPlasmaätzen
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申请号： EP96106731.1申请日： 1996-04-29
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公开(公告)号： EP0741406A2公开(公告)日： 1996-11-06
- 发明人: Bukhman, Yefim , Keller, Edward M.
- 申请人： MOTOROLA, INC.
- 申请人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 专利权人： MOTOROLA, INC.
- 当前专利权人： MOTOROLA, INC.
- 当前专利权人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 代理机构： Spaulding, Sarah Jane
- 优先权： US432556 19950501
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A scaleable laser and control unit (58) is used to differentially heat portions of a semiconductor substrate (40) during downstream etching. Such differential heating provides a differential etch rate for each portion heated resulting in improved uniformity and reduced etch induced surface damage. An etching chamber (50) capable of containing the downstream plasma and providing a direct line of sight between the substrate (40) and the scanable laser unit (58) is provided. In addition, the system provides for dynamic updating of the process by in situ etch rate and temperature measurements.
公开/授权文献
- EP0741406A3 Laser assisted plasma chemical etching apparatus and method 公开/授权日：1999-01-13
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