发明公开
EP0744390A2 Process for producing silicon carbide fibers
失效
Verfahren zur Herstellung von Silicium carbidfasern
- 专利标题: Process for producing silicon carbide fibers
- 专利标题(中): Verfahren zur Herstellung von Silicium carbidfasern
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申请号: EP96108094.2申请日: 1996-05-21
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公开(公告)号: EP0744390A2公开(公告)日: 1996-11-27
- 发明人: Ichikawa, Hiroshi , Takeda, Michio , Sakamoto, Junichi , Saeki, Akinori
- 申请人: NIPPON CARBON CO., LTD.
- 申请人地址: 6-1, Hacchobori 2-chome Chuo-Ku Tokyo JP
- 专利权人: NIPPON CARBON CO., LTD.
- 当前专利权人: NIPPON CARBON CO., LTD.
- 当前专利权人地址: 6-1, Hacchobori 2-chome Chuo-Ku Tokyo JP
- 代理机构: Modiano, Guido, Dr.-Ing.
- 优先权: JP145138/95 19950522
- 主分类号: C04B35/571
- IPC分类号: C04B35/571
摘要:
The present invention provides a process for producing silicon carbide fibers having a C/Si molar ratio of from 0.85 to 1.39 and excellent in heat resistance and strength at high temperatures, while conventional processes have not been able to produce the fibers having the ratio of less than 1.56.
The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.
The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.
公开/授权文献
- EP0744390B1 Process for producing silicon carbide fibers 公开/授权日:1999-04-07
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