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公开(公告)号：EP0744390A3
公开(公告)日：1997-01-22
申请号：EP96108094.2
申请日：1996-05-21
IPC分类号： C04B35/571
CPC分类号： C04B35/571
摘要： The present invention provides a process for producing silicon carbide fibers having a C/Si molar ratio of from 0.85 to 1.39 and excellent in heat resistance and strength at high temperatures, while conventional processes have not been able to produce the fibers having the ratio of less than 1.56. The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.
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2.发明公开Process for producing silicon carbide fibers 失效Verfahren zur Herstellung von Silicium carbidfasern。
公开(公告)号：EP0653391A1
公开(公告)日：1995-05-17
申请号：EP94117853.5
申请日：1994-11-11
IPC分类号： C04B35/571 , D01F9/10
CPC分类号： D01F9/10 , C04B35/571
摘要： A process for producing silicon carbide fibers, comprising the steps of spinning an organosilicon high-molecular compound to obtain precursory fibers, rendering infusible the precursory fibers to obtain infusible fibers, and baking the infusible fibers thereby to obtain silicon carbide fibers, characterized in that the baking is performed in an atmosphere selected from the group consisting of a hydrogen gas atmosphere, a dilute hydrogen gas atmosphere and an inert gas atmosphere, with the proviso that the baking at any temperature in at least a part of a temperature range from 500 to 950 °C is carried out in a hydrogen gas or dilute hydrogen gas atmosphere.
摘要翻译： 一种制造碳化硅纤维的方法，包括以下步骤：使有机硅高分子化合物旋转以获得前体纤维，使前体纤维不熔融以获得不熔融纤维，并烘焙不熔纤维，从而获得碳化硅纤维，其特征在于， 在选自氢气气氛，稀氢气气氛和惰性气体气氛的气氛中进行烘烤，条件是在至少部分温度范围为500至950℃的任何温度下烘烤 DEG在氢气或稀氢气氛中进行。
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公开(公告)号：EP0744390B1
公开(公告)日：1999-04-07
申请号：EP96108094.2
申请日：1996-05-21
IPC分类号： C04B35/571
CPC分类号： C04B35/571
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公开(公告)号：EP0653391B1
公开(公告)日：1998-03-04
申请号：EP94117853.5
申请日：1994-11-11
IPC分类号： C04B35/571 , D01F9/10
CPC分类号： D01F9/10 , C04B35/571
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5.发明公开
公开(公告)号：EP0744390A2
公开(公告)日：1996-11-27
申请号：EP96108094.2
申请日：1996-05-21
IPC分类号： C04B35/571
CPC分类号： C04B35/571
摘要： The present invention provides a process for producing silicon carbide fibers having a C/Si molar ratio of from 0.85 to 1.39 and excellent in heat resistance and strength at high temperatures, while conventional processes have not been able to produce the fibers having the ratio of less than 1.56.
The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.摘要翻译： 本发明提供了C / Si摩尔比为0.85〜1.39的碳化硅纤维的制造方法，在高温下耐热性和强度优异的同时，常规方法不能生产出比例小的纤维 比1.56。 本发明的方法包括以下步骤：使由有机硅高分子化合物制成的可熔化的前体纤维得到不熔的纤维，然后主要在含氢气的气氛中焙烧可熔纤维，同时提高其温度以获得主要焙烧的纤维;以及 进一步二次烘烤主要焙烧的纤维以获得最终纤维。 二次烘烤在惰性气体与氯化氢气体的混合气体的气氛中在1500〜2200℃下进行。
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