发明公开
- 专利标题： Josephson device
- 专利标题（中）： 约瑟夫森-Anordnung
-
申请号： EP96305357.4申请日： 1996-07-22
-
公开(公告)号： EP0756335A1公开(公告)日： 1997-01-29
- 发明人: Konishi, Masaya , Matsunaga, Yoshinori , Enomoto, Youichi , Tanaka, Shoji
- 申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
- 申请人地址： 34-3, Shimbashi 5-chome, Minato-ku Tokyo JP
- 专利权人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
- 当前专利权人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
- 当前专利权人地址： 34-3, Shimbashi 5-chome, Minato-ku Tokyo JP
- 代理机构： Smith, Norman Ian
- 优先权： JP209005/95 19950724
- 主分类号： H01L39/22
- IPC分类号： H01L39/22
摘要：
A crystal grain boundary is produced by growing a single crystal YBa 2 Cu 3 O 7-x thin film (2) having a c-axis parallel to the surface on a single crystal YBa 2 Cu 3 O 7-x (001) substrate (1) having a c-axis vertical to the surface by a magnetron sputtering method at a substrate temperature between 500°C and 680°C. The difference of the orientations makes a grain boundary at the interface without interposition of any other material than YBa 2 Cu 3 O 7-x . The grain boundary is utilized as a Josephson junction.
公开/授权文献
- EP0756335B1 Josephson device 公开/授权日：2000-04-12
信息查询
IPC分类:
