发明公开
EP0762518A2 Improvements in or relating to semiconductor devices
失效
Verbesserungen一个Halbleiteranordnungen
- 专利标题： Improvements in or relating to semiconductor devices
- 专利标题（中）： Verbesserungen一个Halbleiteranordnungen
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申请号： EP96306593.3申请日： 1996-09-11
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公开(公告)号： EP0762518A2公开(公告)日： 1997-03-12
- 发明人: Abbott, Donald C. , Bawa, Mohendra S.
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 代理机构： Nettleton, John Victor
- 优先权： US3568 19950911
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica.
公开/授权文献
- EP0762518A3 Improvements in or relating to semiconductor devices 公开/授权日：1999-10-13
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