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10 条记录 (耗时 0.01 秒)

    Improvements in or relating to semiconductor devices
    1.
    发明公开
    Improvements in or relating to semiconductor devices 失效
    半导体器件或与之相关的改进

    公开(公告)号：EP0762517A2

    公开(公告)日：1997-03-12

    申请号：EP96306592.5

    申请日：1996-09-11

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Abbott, Donald C. ,  Bawa, Mohendra S.

    IPC分类号： H01L33/00 ,  H01L21/30

    CPC分类号： H01L21/302 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention is to a method for producing a high surface substrate. A mask is positioned (31) over a substrate to define a deposition area. Thereafter at least two dissimilar materials are simultaneously deposited (32) through the mask onto the deposition area. Then one of the deposited materials is selectively removed (33) to provide a high surface area deposited substrate.

    摘要翻译： 本发明涉及生产高表面基材的方法。 掩模被定位（31）在衬底上以限定沉积区域。 此后，至少两种不同材料通过掩模同时沉积（32）到沉积区域上。 然后选择性地去除其中一种沉积材料（33）以提供高表面积沉积基底。

    Method of polishing
    2.
    发明公开
    Method of polishing 失效
    抛光方法

    公开(公告)号：EP0849040A3

    公开(公告)日：2000-03-01

    申请号：EP97310334.4

    申请日：1997-12-19

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bawa, Mohendra S. ,  Simpson, Vikki Sue ,  Grimes, Michael H. ,  Allen, Franklin Louis ,  L'Anglois, Kenneth John ,  Miller, Palmer Arthur ,  Etheridge, Gary Lee

    IPC分类号： B24B37/04 ,  H01L21/304 ,  B24B55/03 ,  B01D39/16

    CPC分类号： H01L21/02024 ,  B01D39/16 ,  B24B37/04 ,  B24B55/03 ,  B24B57/02

    摘要： A method for managing particulate in a chemical-mechanical polishing slurry (28), the method comprising circulating the polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10), passing the polishing slurry through a filtration system (39) and filtering the particulate, including aggregates, precipitates and particles of SiO x created during the polishing process, out of the polishing slurry. The filtration system (39) may comprise a polypropylene filter or a hydrophilic polypropylene filter and the filter may have an internal surface area of approximately 72 square inches which is wetted before passing the polishing slurry therethrough. The filter has a pore size between about 25 and 100 microns and preferably about 50 microns.

    摘要翻译： 一种用于管理化学机械抛光浆液（28）中的颗粒的方法，所述方法包括：使抛光浆液（28）在化学机械抛光装置（10）中循环，使抛光浆液通过过滤系统（39），并且 将抛光过程中产生的包括聚集体，沉淀物和SiOx颗粒的颗粒过滤出抛光浆料。 过滤系统（39）可以包括聚丙烯过滤器或亲水聚丙烯过滤器，并且过滤器可以具有大约72平方英寸的内表面积，其在将抛光浆料通过其中之前被润湿。 过滤器具有约25至100微米，优选约50微米的孔径。

    Polishing method
    4.
    发明公开
    Polishing method 失效
    抛光方法

    公开(公告)号：EP0849041A2

    公开(公告)日：1998-06-24

    申请号：EP97310392.2

    申请日：1997-12-19

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bawa, Mohendra S. ,  Simpson, Vikki Sue ,  Grimes, Michael H. ,  Allen, Franklin Louis ,  L'Anglois, Kenneth John ,  Miller, Palmer Arthur ,  Etheridge, Gary Lee

    IPC分类号： B24B37/04 ,  H01L21/304 ,  B24B49/14 ,  B24B55/02

    CPC分类号： B24B37/015 ,  B24B55/03 ,  B24B57/02 ,  H01L21/31053 ,  H01L21/3212

    摘要： A method for controlling the temperature of a polishing slurry during chemical-mechanical polishing, the method comprising circulating the polishing slurry (28) in a chemical-mechanical polishing apparatus (10), monitoring the temperature of the polishing slurry, exposing the slurry to a temperature control element (36) during the recirculation of the polishing slurry to adjust the temperature of the polishing slurry and maintaining the temperature of the polishing slurry within a predetermined range, thereby maintaining control of the temperature of the polishing slurry.

    摘要翻译： 一种用于在化学机械抛光过程中控制抛光浆料的温度的方法，所述方法包括使抛光浆料（28）在化学机械抛光设备（10）中循环，监控抛光浆料的温度，使浆料暴露于 温度控制元件（36）在研磨浆料的再循环期间调节研磨浆料的温度并且将研磨浆料的温度保持在预定范围内，从而保持对研磨浆料的温度的控制。

    Method of polishing
    6.
    发明公开
    Method of polishing 失效
    Polierverfahren

    公开(公告)号：EP0849040A2

    公开(公告)日：1998-06-24

    申请号：EP97310334.4

    申请日：1997-12-19

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bawa, Mohendra S. ,  Simpson, Vikki Sue ,  Grimes, Michael H. ,  Allen, Franklin Louis ,  L'Anglois, Kenneth John ,  Miller, Palmer Arthur ,  Etheridge, Gary Lee

    IPC分类号： B24B37/04 ,  H01L21/304 ,  B24B55/03 ,  B01D39/16

    CPC分类号： H01L21/02024 ,  B01D39/16 ,  B24B37/04 ,  B24B55/03 ,  B24B57/02

    摘要： A method for managing particulate in a chemical-mechanical polishing slurry (28), the method comprising circulating the polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10), passing the polishing slurry through a filtration system (39) and filtering the particulate, including aggregates, precipitates and particles of SiO x created during the polishing process, out of the polishing slurry. The filtration system (39) may comprise a polypropylene filter or a hydrophilic polypropylene filter and the filter may have an internal surface area of approximately 72 square inches which is wetted before passing the polishing slurry therethrough. The filter has a pore size between about 25 and 100 microns and preferably about 50 microns.

    摘要翻译： 一种用于管理化学机械抛光浆料（28）中的颗粒的方法，所述方法包括使抛光浆料（28）循环在化学机械晶片抛光装置（10）中，使抛光浆料通过过滤系统（39）和 将抛光过程中产生的颗粒，包括聚集体，沉淀物和SiO x颗粒过滤出抛光浆液。 过滤系统（39）可以包括聚丙烯过滤器或亲水聚丙烯过滤器，并且过滤器可以具有大约72平方英寸的内表面积，其在通过抛光浆料之前被润湿。 过滤器的孔径在约25至100微米之间，优选约50微米。

    Improvements in or relating to semiconductor devices
    7.
    发明公开
    Improvements in or relating to semiconductor devices 失效
    Verbesserungen一个Halbleiteranordnungen

    公开(公告)号：EP0762518A2

    公开(公告)日：1997-03-12

    申请号：EP96306593.3

    申请日：1996-09-11

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Abbott, Donald C. ,  Bawa, Mohendra S.

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： C23C16/45519 ,  C23C16/24 ,  C23C16/513 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica.

    摘要翻译： 本发明是通过掩蔽基板（31）来限定沉积区域来制造硅基板的方法。 将气体形式的硅与硅沉积（33）到沉积区上。 通过在非含氧气体或液体（32）下的等离子体沉积与基底进行沉积以防止二氧化硅的形成。

    Improvements in or relating to semiconductor devices
    9.
    发明公开
    Improvements in or relating to semiconductor devices 失效
    半导体器件或与之相关的改进

    公开(公告)号：EP0762518A3

    公开(公告)日：1999-10-13

    申请号：EP96306593.3

    申请日：1996-09-11

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Abbott, Donald C. ,  Bawa, Mohendra S.

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： C23C16/45519 ,  C23C16/24 ,  C23C16/513 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica.

    摘要翻译： 本发明涉及通过掩蔽衬底（31）以限定沉积区域来制造硅衬底的方法。 以气体形式的硅与硅沉积（33）到沉积区域上。 沉积是通过等离子体沉积与衬底在不含氧的气体或液体（32）下形成的，以防止二氧化硅的形成。