发明公开
- 专利标题： Insulated gate transistor drive circuit
- 专利标题（中）： Isolierte门极晶体管 - Ansteuerschaltung
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申请号： EP96113400.4申请日： 1996-08-21
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公开(公告)号： EP0762652A1公开(公告)日： 1997-03-12
- 发明人: Chikai, Satoru, c/o Mitsubishi Denki K.K. , Mori, Haruyoshi, c/o Mitsubishi Denki K.K. , Kobayashi, Tomohiro, c/o Mitsubishi Denki K.K.
- 申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 申请人地址： 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
- 专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址： 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
- 代理机构： Ritter und Edler von Fischern, Bernhard, Dipl.-Ing.
- 优先权： JP217191/95 19950825
- 主分类号： H03K17/082
- IPC分类号： H03K17/082
摘要：
The cutoff process of a collector current is divided into an emitter-to-collector voltage recovery period and a collector current cutoff period. During the emitter-to-collector voltage recovery period the resistance of a gate resistor is reduced, and during the collector current cutoff period the resistance of the gate resistor is increased. With this arrangement, the cutoff time is shortened, thereby reducing switching loss and suppressing surge voltage.
公开/授权文献
- EP0762652B1 Insulated gate transistor drive circuit 公开/授权日：1998-11-04
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