A method of forming a self-aligned contact hole, in particular a bitline contact, includes steps of first depositing a sacrificial polysilicon layer (4) on a spacer dielectric film (3), and thereafter patterning the polysilicon. The polysilicon layer is a sacrificial fill-in for a bitline contact stud. The method further includes depositing a middle-of-line (MOL) oxide (6) on the polysilicon layer (4), and planarizing the MOL oxide by chemical-mechanical polishing (CMP). Thereafter, the polysilicon layer (4) is etched away and the spacer dielectric film (3) is etched to form a self-aligned bitline contact.