发明公开
- 专利标题： Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof
- 专利标题（中）： 电极或布线的半导体装置或有源矩阵基板和制造过程
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申请号： EP96306683.2申请日： 1996-09-13
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公开(公告)号： EP0768710A3公开(公告)日： 1997-07-30
- 发明人: Fukumoto, Yoshihiko
- 申请人： CANON KABUSHIKI KAISHA
- 申请人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 代理机构： Beresford, Keith Denis Lewis
- 优先权： JP236865/95 19950914; JP241939/96 19960912
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above.
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