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1.发明公开Photoelectric conversion device and image pickup system with photoelectric conversion device 审中-公开的光电转换装置和成像系统的光电转换装置
公开(公告)号：EP1879231A3
公开(公告)日：2011-03-16
申请号：EP07111743.6
申请日：2007-07-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.
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公开(公告)号：EP0845805A3
公开(公告)日：1999-02-17
申请号：EP97309566.4
申请日：1997-11-27
发明人： Fukumoto, Yoshihiko
IPC分类号： H01L21/321
CPC分类号： H01L21/02074 , H01L21/3212
摘要： A fabrication method of semiconductor device comprising a step of forming an electroconductive material film on a substrate, a step of polishing the electroconductive material film, and a step of washing a polished surface of the electroconductive material film, wherein the washing step is a step of carrying out ultrasonic washing with a washing solution to which an ultrasonic wave is applied, prior to physical washing.
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3.发明公开
公开(公告)号：EP0837355A3
公开(公告)日：1999-02-10
申请号：EP97308261.3
申请日：1997-10-17
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133526 , G02F1/133512 , G02F1/133553 , G02F1/136277 , G02F2001/133357 , G02F2201/48
摘要： A matrix substrate (1) comprises a pixel region (250) formed by arranging a plurality of pixel electrodes (12) to a matrix, drive circuit regions (260) for feeding said pixel electrodes (12) with electric signals and sealing regions (270). The gaps separating the pixel electrodes (12) are filled with insulation members of an insulating material (9) to provide a continuous surface connecting those of the pixel electrodes (12) and members (12') of the material of the pixel electrodes and those of the material (9) of the insulation members are arranged at least either in the drive circuit regions (26) or in the sealing regions (270) to provide a continuous surface there.
摘要翻译： 矩阵衬底（1）包括通过设置像素电极（12）以一个矩阵的多个形成的像素区域（250），驱动电路区（260），用于馈送所述象素电极（12）的电信号和密封区域（270 ）。 分离的像素电极（12）的间隙被填充有绝缘材料（9）的绝缘部件，以提供连续的表面连接这些像素电极（12）和所述像素电极和这些材料的构件（12“）的 材料（9）的绝缘件布置的至少一方在所述驱动电路区（26）或在所述密封区域（270），以有提供一个连续的表面。
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4.发明公开Photoelectric conversion device and image pickup system with photoelectric conversion device 审中-公开Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem mit der photoelektrischen Umwandlungsvorrichtung
公开(公告)号：EP2445009A2
公开(公告)日：2012-04-25
申请号：EP11195883.1
申请日：2007-07-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a solid-state imaging apparatus, wherein the solid-state imaging apparatus comprises a photoelectric conversion element, a transfer gate electrode, a second semiconductor region, an element isolation region, and a wiring, arranged on the element isolation region, wherein the manufacturing method comprises a step of forming the second semiconductor region, by injecting an impurity ion, through a mask covering the wiring and the element isolation region and extending from the element isolation region to a part of an activation region, into a portion of the activation region not covered with the mask.
摘要翻译： 固体摄像装置的制造方法，其特征在于，所述固体摄像装置具有配置在所述元件隔离区域上的光电转换元件，传输栅电极，第二半导体区域，元件隔离区域和布线， 其特征在于，所述制造方法包括：通过将覆盖所述布线和所述元件隔离区域并从所述元件隔离区域延伸至所述激活区域的一部分的掩模，注入杂质离子，形成所述第二半导体区域的步骤， 激活区域未被掩模覆盖。
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公开(公告)号：EP2333834A2
公开(公告)日：2011-06-15
申请号：EP10190863.0
申请日：2010-11-11
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/1463
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions (102, 105), an interlayer insulating film (108, 109) arranged on the plurality of photoelectric conversion regions (102, 105), a protective insulating film (110) that is arranged in contact with the interlayer insulating film (108, 109) and has a refractive index different from that of the interlayer insulating film (108, 109), recesses (111) arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions (102, 105), and embedded regions (112) embedded in the recesses (111). When a wavelength of incident light to each of the plurality of photoelectric conversion regions (102, 105) is denoted by λ and a refractive index of the embedded regions (112) is denoted by n, a depth d of the recesses (111) is represented by an expression d ≥ λ/4n.
摘要翻译： 光电转换装置包括多个光电转换区域（102,105），布置在多个光电转换区域（102,105）上的层间绝缘膜（108,109），布置在保护绝缘膜 与层间绝缘膜（108,109）接触并且具有与层间绝缘膜（108,109）的折射率不同的折射率，设置在多个光电转换中的每一个的光接收表面中的凹部（111） 区域（102,105）和嵌入凹槽（111）中的嵌入区域（112）。 当将多个光电转换区域（102,105）中的每一个的入射光的波长表示为»，并且嵌入区域（112）的折射率由n表示时，凹部（111）的深度d 由表达式d‰¥»/ 4n表示。
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6.发明公开Electrode or wiring for a semiconductor device, an active matrix substrate and process for production thereof 失效Herstellungsverfahrenfüreine Elektrode auf einem Substrat mit aktiver Matrix
公开(公告)号：EP0768710A2
公开(公告)日：1997-04-16
申请号：EP96306683.2
申请日：1996-09-13
发明人： Fukumoto, Yoshihiko
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , G02F1/133553 , G02F1/1362 , G02F2201/48 , H01L21/02074 , H01L21/3212
摘要： A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above.
摘要翻译： 一种制造半导体器件的方法包括：在形成于半导体区域上的绝缘层中研磨用作电极或布线的导电材料的区域的步骤，导电材料的区域电连接到半导体区域 其中在待抛光的导电材料的区域内形成另一种材料的区域。 还提供了具有该区域的半导体器件。 一种制造有源矩阵基板的方法包括：对由多个信号线和多条扫描线的交叉部分设置的金属构成的像素电极进行研磨的步骤和向该像素施加电压的装置，其中，另一种材料的区域 形成在待研磨的像素电极的区域内。 有源矩阵基板具有如上所述的像素电极。
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公开(公告)号：EP0751417B1
公开(公告)日：2002-09-04
申请号：EP96304815.2
申请日：1996-06-28
发明人： Fukumoto, Yoshihiko
IPC分类号： G02F1/136 , G02F1/1335
CPC分类号： G02F1/133553 , G02F1/136277 , G02F2001/13373 , G02F2001/136281 , G02F2201/48
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8.发明公开
公开(公告)号：EP0837355A2
公开(公告)日：1998-04-22
申请号：EP97308261.3
申请日：1997-10-17
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133526 , G02F1/133512 , G02F1/133553 , G02F1/136277 , G02F2001/133357 , G02F2201/48
摘要： A matrix substrate (1) comprises a pixel region (250) formed by arranging a plurality of pixel electrodes (12) to a matrix, drive circuit regions (260) for feeding said pixel electrodes (12) with electric signals and sealing regions (270). The gaps separating the pixel electrodes (12) are filled with insulation members of an insulating material (9) to provide a continuous surface connecting those of the pixel electrodes (12) and members (12') of the material of the pixel electrodes and those of the material (9) of the insulation members are arranged at least either in the drive circuit regions (26) or in the sealing regions (270) to provide a continuous surface there.
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9.发明公开
公开(公告)号：EP0768710A3
公开(公告)日：1997-07-30
申请号：EP96306683.2
申请日：1996-09-13
发明人： Fukumoto, Yoshihiko
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , G02F1/133553 , G02F1/1362 , G02F2201/48 , H01L21/02074 , H01L21/3212
摘要： A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above.
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10.发明公开Photoelectric conversion device and image pickup system with photoelectric conversion device 审中-公开的光电转换装置和成像系统的光电转换装置
公开(公告)号：EP2445009A3
公开(公告)日：2013-11-13
申请号：EP11195883.1
申请日：2007-07-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a solid-state imaging apparatus, wherein the solid-state imaging apparatus comprises a photoelectric conversion element, a transfer gate electrode, a second semiconductor region, an element isolation region, and a wiring, arranged on the element isolation region, wherein the manufacturing method comprises a step of forming the second semiconductor region, by injecting an impurity ion, through a mask covering the wiring and the element isolation region and extending from the element isolation region to a part of an activation region, into a portion of the activation region not covered with the mask.
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