发明公开
EP0768715A2 Graded-channel semiconductor device and method of manufacturing the same
失效
Halaliteranordnung mit gradiertem Kanal und Verfahren zur Herstellung
- 专利标题： Graded-channel semiconductor device and method of manufacturing the same
- 专利标题（中）： Halaliteranordnung mit gradiertem Kanal und Verfahren zur Herstellung
-
申请号： EP96115902.7申请日： 1996-10-04
-
公开(公告)号： EP0768715A2公开(公告)日： 1997-04-16
- 发明人: Davies, Robert B. , Baker, Frank K. , Candelaria, Jon J. , Wild, Andreas A. , Zdebel, Peter J.
- 申请人： MOTOROLA INC.
- 申请人地址： 3rd Floor, Corporate Towers, 1303 East Algonquin Road Schaumburg, Illinois 60196 US
- 专利权人： MOTOROLA INC.
- 当前专利权人： MOTOROLA INC.
- 当前专利权人地址： 3rd Floor, Corporate Towers, 1303 East Algonquin Road Schaumburg, Illinois 60196 US
- 代理机构： Spaulding, Sarah Jane
- 优先权： US541536 19951010
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/78 ; H01L21/336
摘要：
A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) and is spaced apart from the source region (13), the drain region (14), and the major surface (12). The doped region (18) has the same conductivity type as the channel region (16), but has a higher dopant concentration. The device (10) exhibits an enhanced punch-through resistance and improved performance compared to prior art short channel structures.
信息查询
IPC分类:
