发明公开
- 专利标题： MOS transistor and manufacturing method of the same
- 专利标题（中）： 一种用于确定在多个散射的存在粒子的大小的方法
-
申请号： EP96120383.3申请日： 1996-12-18
-
公开(公告)号： EP0781986A2公开(公告)日： 1997-07-02
- 发明人: Harvill, Thomas L. , Holve, Donald J.
- 申请人： Insitec Measurement Systems
- 申请人地址： 2110 Omega Road, #D San Ramon, CA 94583 US
- 专利权人： Insitec Measurement Systems
- 当前专利权人： Insitec Measurement Systems
- 当前专利权人地址： 2110 Omega Road, #D San Ramon, CA 94583 US
- 代理机构： Reinhard - Skuhra - Weise & Partner
- 优先权： US581681 19951229
- 主分类号： G01N15/02
- IPC分类号： G01N15/02
摘要：
A method applicable to an ensemble laser diffraction (ELD) instrument computes a particle size distribution in real time after correction for the multiple scattering phenomena. In one embodiment, a numerical method, similar to the Newton's method, is provided to iteratively calculate the single scattering mode. The present method is hence suitable for use, with high accuracy, in real time controlling and monitoring applications.
公开/授权文献
信息查询
