发明公开
- 专利标题： Photovoltaic device
- 专利标题（中）： Photovoltaische Vorrichtung
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申请号： EP97114860.6申请日： 1997-08-27
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公开(公告)号： EP0827213A2公开(公告)日： 1998-03-04
- 发明人: Sano, Masafumi , Nakamura, Tetsuro
- 申请人： CANON KABUSHIKI KAISHA
- 申请人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 代理机构： Bühling, Gerhard, Dipl.-Chem.
- 优先权： JP226651/96 19960828
- 主分类号： H01L31/075
- IPC分类号： H01L31/075 ; H01L31/20
摘要：
In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.
公开/授权文献
- EP0827213A3 Photovoltaic device 公开/授权日：1999-05-19
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