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    Method of producing photovoltaic device
    1.
    发明公开
    Method of producing photovoltaic device 审中-公开
    Verfahren zur Herstellung einer photovoltaischen Vorrichtung

    公开(公告)号：EP1463128A2

    公开(公告)日：2004-09-29

    申请号：EP04007128.4

    申请日：2004-03-24

    申请人： CANON KABUSHIKI KAISHA

    发明人： Nakamura, Tetsuro ,  Sano, Masafumi

    IPC分类号： H01L31/18 ,  C25D9/04

    CPC分类号： H01L31/18 ,  C25D9/04 ,  H01L31/056 ,  Y02E10/52

    摘要： There is disclosed a method of producing a photovoltaic device, characterized in that it includes steps of: a step of forming a zinc oxide layer on a substrate at least by electrolytic deposition; subjecting the zinc oxide layer to any one treatment selected from the group consisting of plasma treatment with a rare gas or nitrogen gas, ion irradiation, light irradiation and electromagnetic irradiation; and forming on the zinc oxide layer a semiconductor layer that are made up of a non-single crystal silicon material containing hydrogen and have at least one p-i-n junction.

    摘要翻译： 公开了一种光电器件的制造方法，其特征在于，包括以下步骤：至少通过电解沉积在基板上形成氧化锌层的工序; 对氧化锌层进行选自由稀有气体或氮气进行等离子体处理，离子照射，光照射和电磁照射的任一种处理; 以及在所述氧化锌层上形成半导体层，所述半导体层由含有氢并且具有至少一个p-i-n结的非单晶硅材料构成。

    Photovoltaic device
    2.
    发明公开
    Photovoltaic device 失效
    一种光电器件

    公开(公告)号：EP0827213A3

    公开(公告)日：1999-05-19

    申请号：EP97114860.6

    申请日：1997-08-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Sano, Masafumi ,  Nakamura, Tetsuro

    IPC分类号： H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

    Photovoltaic device
    3.
    发明公开
    Photovoltaic device 失效
    Photovoltaische Vorrichtung

    公开(公告)号：EP0827213A2

    公开(公告)日：1998-03-04

    申请号：EP97114860.6

    申请日：1997-08-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Sano, Masafumi ,  Nakamura, Tetsuro

    IPC分类号： H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

    摘要翻译： 在具有多个引脚结构的光电器件中，引脚结构包括从光入射侧开始的顺序的第一引脚结构，第二引脚结构和第三引脚结构，每个具有i型半导体层，并且 第一引脚结构的i型半导体层包括非晶硅，第二引脚结构的i型半导体层包括微晶硅，第三引脚结构的i型半导体层包括非晶硅锗或微晶硅锗。 根据本发明的光电器件提供了优异的光电转换效率并且导致光劣化较少。

    Photovoltaic element and method of forming photovoltaic element
    4.
    发明公开
    Photovoltaic element and method of forming photovoltaic element 审中-公开
    Photovoltaisches Bauelement und sein Herstellungsverfahren

    公开(公告)号：EP1475843A2

    公开(公告)日：2004-11-10

    申请号：EP04010784.9

    申请日：2004-05-06

    申请人： Canon Kabushiki Kaisha

    发明人： Kondo, Takaharu ,  Sano, Masafumi ,  Takai, Yasuyoshi ,  Higashikawa, Makoto ,  Tsuzuki, Hidetoshi ,  Nakamura, Tetsuro

    IPC分类号： H01L31/075 ,  H01L31/20 ,  H01L31/0224 ,  H01L31/0368

    CPC分类号： H01L31/0745 ,  H01L31/0747 ,  H01L31/076 ,  Y02E10/548

    摘要： The present invention provides a photovoltaic element including a structure with a first pin-junction having an i-type semiconductor layer made of amorphous silicon and a second pin-junction having an i-type semiconductor layer containing crystalline silicon which are arranged in series on a substrate, wherein the first pin-junction has a first intermediate layer at a p/i interface and a second intermediate layer at an n/i interface, and the second pin-junction has a third intermediate layer at a p/i interface and a fourth intermediate layer at an n/i interface, and wherein the second intermediate layer and the third intermediate layer are made of amorphous silicon and the first intermediate layer and the fourth intermediate layer contain crystalline silicon, or wherein the second intermediate layer and the third intermediate layer contain crystalline silicon and the first intermediate layer and the fourth intermediate layer are made of amorphous silicon.

    摘要翻译： 本发明提供了一种光电元件，其包括具有由非晶硅制成的i型半导体层的第一pin结和具有包含结晶硅的i型半导体层的第二pin结的结构， 衬底，其中所述第一pin结具有在ap / i界面处的第一中间层和在n / i界面处的第二中间层，并且所述第二pin结在ap / i界面处具有第三中间层，并且第四中间体 层，其中第二中间层和第三中间层由非晶硅制成，第一中间层和第四中间层含有结晶硅，或者其中第二中间层和第三中间层含有 晶体硅，第一中间层和第四中间层由非晶硅制成。