发明授权
- 专利标题： PROCESS FOR PLASMA ENHANCED ANNEAL OF TITANIUM NITRIDE
- 专利标题（中）： 等离子体的激活的方法热处理氮化钛
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申请号： EP96916686.7申请日： 1996-05-28
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公开(公告)号： EP0832311B1公开(公告)日： 1999-07-14
- 发明人: FOSTER, Robert, F. , HILLMAN, Joseph, T. , ARORA, Rikhit
- 申请人： Tokyo Electron Limited
- 申请人地址： TBS Broadcast Center, 5-3-6 Akasaka Minato-ku, Tokyo 107 JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： TBS Broadcast Center, 5-3-6 Akasaka Minato-ku, Tokyo 107 JP
- 代理机构： Robinson, Nigel Alexander Julian
- 优先权： US461665 19950605
- 国际公布： WO9639548 19961212
- 主分类号： C23C14/58
- IPC分类号： C23C14/58 ; C23C16/56
摘要：
A titanium nitride film is annealed at a temperature less than 500 DEG C by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.
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