公开(公告)号：EP0763149B1

公开(公告)日：1998-10-28

申请号：EP95904143.5

申请日：1994-11-29

申请人： Tokyo Electron Limited

发明人： FOSTER, Robert, F. ,  HILLMAN, Joseph, T. ,  ARORA, Rikhit

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4417 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/5096 ,  Y10S438/935

摘要： Low temperature deposition of CVD and PECVD films utilizes a gas-dispersing showerhead (36) position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing ring (50, 52) such a steady state flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate. The showerhead is biased with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder (60) is isolated from the showerhead such as by a quartz insulator ring (62) to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gas-dispersing holes (54) to further prevent ignition of a plasma within the cylinder.

公开(公告)号：EP0646285B1

公开(公告)日：1998-11-04

申请号：EP93915332.6

申请日：1993-06-11

申请人： Tokyo Electron Limited

发明人： FOSTER, Robert, F. ,  REBENNE, Helen, E. ,  LEBLANC, Rene, E. ,  WHITE, Carl, L. ,  ARORA, Rikhit

IPC分类号： H01L21/205 ,  H01L21/365

CPC分类号： C23C16/45565 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45521 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/67109

摘要： A semiconductor wafer processing apparatus (10) is provided with a susceptor (40) for supporting a wafer (44) for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead (35) directs a gas mixture from a cooled mixing chamber (30) onto an upwardly facing wafer (44) on the susceptor (40). Smooth interior reactor surfaces include baffles (90, 101, 102) and a susceptor lip (162) and wall (130) shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip (162) surrounds the wafer (44) and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip (162) smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.

公开(公告)号：EP0832311B1

公开(公告)日：1999-07-14

申请号：EP96916686.7

申请日：1996-05-28

申请人： Tokyo Electron Limited

发明人： FOSTER, Robert, F. ,  HILLMAN, Joseph, T. ,  ARORA, Rikhit

IPC分类号： C23C14/58 ,  C23C16/56

CPC分类号： H01L21/321

摘要： A titanium nitride film is annealed at a temperature less than 500 DEG C by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

公开(公告)号：EP0644953B1

公开(公告)日：1999-01-13

申请号：EP93916503.1

申请日：1993-06-11

申请人： Tokyo Electron Limited

发明人： FOSTER, Robert F. ,  REBENNE, Helen E. ,  LEBLANC, Rene E. ,  WHITE, Carl L. ,  ARORA, Rikhit

IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/48 ,  C23C16/54 ,  H01L21/285

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45508 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/6838

摘要： A semiconductor wafer processing apparatus (10) or module for a cluster tool is provided with a single wafer rotating susceptor (40) that thins the gas boundary layer to facilitate the transfer of material to or from the wafer (44), in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead (35) directs a gas mixture from a cooled mixing chamber (30) onto a rapidly rotating wafer (44), for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point (198) at the wafer center. Smoothly shaped interior reactor surfaces include baffles (90, 101, 102) and plasma cleaning electrodes (80, 90) to minimize turbulence. Inert gases from within the rotating susceptor (40) minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer (44), and vacuum clamp the wafer to the susceptor (40). A susceptor lip (162) surrounds the wafer (44) and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge.