发明公开
EP0837511A2 Solar cell and method for manufacturing the same 失效
Sonnenzelle und Herstellungsverfahren

Solar cell and method for manufacturing the same
摘要:
A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions. This solar cell includes a substrate (1), a back electrode (2), a p-type chalcopyrite semiconductor thin film (3), an n-type semiconductor thin film (4) formed so as to establish a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode (5). A material having a higher resistivity than the p-type chalcopyrite semiconductor (6) is formed between the p-type chalcopyrite semiconductor thin film (3) and the n-type semiconductor thin film (4). A thin film (6) made of this material may be formed by deposition from a solution.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/0248 .以其半导体本体为特征的
H01L31/0256 ..以材料为特征的
H01L31/0264 ...无机材料
H01L31/0328 ....除掺杂或其他杂质外,包含已列入H01L31/0272至H01L31/032组中两组或更多个组的半导体材料
H01L31/0336 .....在不同半导体区域的,如Cu2X/CdX异质结,X为周期表中的Ⅵ族元素
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