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公开(公告)号：EP1460692B1
公开(公告)日：2008-10-29
申请号：EP04005994.1
申请日：2004-03-12
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
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公开(公告)号：EP0837511A3
公开(公告)日：1999-07-14
申请号：EP97117743.1
申请日：1997-10-14
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions. This solar cell includes a substrate (1), a back electrode (2), a p-type chalcopyrite semiconductor thin film (3), an n-type semiconductor thin film (4) formed so as to establish a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode (5). A material having a higher resistivity than the p-type chalcopyrite semiconductor (6) is formed between the p-type chalcopyrite semiconductor thin film (3) and the n-type semiconductor thin film (4). A thin film (6) made of this material may be formed by deposition from a solution.
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公开(公告)号：EP1460692A3
公开(公告)日：2005-11-09
申请号：EP04005994.1
申请日：2004-03-12
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.
摘要翻译： 本发明的目的是提供一种太阳能电池及其制造方法，其包括具有Zn，Mg和O的层，并且可以实现效率的提高。 太阳能电池包括第一电极层，第二电极层，设置在第一电极层和第二电极层之间的p型半导体层以及设置在第二电极层和p型半导体层之间的层A， A层包含Zn，Mg，O和选自Ca，Sr，Ba，Al，In和Ga中的至少一种元素M，并且由于从第二电极层侧入射的光而产生光电动势。
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公开(公告)号：EP0837511B1
公开(公告)日：2005-09-14
申请号：EP97117743.1
申请日：1997-10-14
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
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公开(公告)号：EP1492169A2
公开(公告)日：2004-12-29
申请号：EP04014934.6
申请日：2004-06-25
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0322 , H01L31/022425 , H01L31/022466 , H01L31/07 , Y02E10/541
摘要： A CIS-based solar cell with a high conversion efficiency that has been reduced in cost by omitting a window layer is provided. A solar cell (10) includes: a first layer (1) having translucency and conductivity; and a p-type semiconductor layer (2) disposed adjacent to the first layer (1), with a junction being formed by the first layer (1) and the p-type semiconductor layer (2), wherein the p-type semiconductor layer (2) includes a semiconductor with a chalcopyrite structure containing a group Ib element, a group IIIb element and a group VIb element; the first layer (1) has a carrier density of 10 19 /cm 3 or more, a band gap Eg 1 (eV) of the first layer (1) and a band gap Eg 2 (eV) of the p-type semiconductor layer (2) satisfy a relationship represented by the formula: Eg 1 > Eg 2 , and an electron affinity χ 1 (eV) of the first layer (1) and an electron affinity χ 2 (eV) of the p-type semiconductor layer (2) satisfy a relationship represented by the formula: 0 ≤ (χ 2 - χ 1 )
摘要翻译： 太阳能电池（10）包括由具有透光性和导电性的第一层（1）和p型半导体层（2）形成的结。 p型层包括具有含有Ib，IIIb和VIb族元素的黄铜矿结构的半导体。 第一层的载流子密度不大于> 101> 9> / cm3>，带隙大于半导体层。 半导体层和第一层的电子亲和力之差为0 - 小于0.5。
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公开(公告)号：EP0837511A2
公开(公告)日：1998-04-22
申请号：EP97117743.1
申请日：1997-10-14
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions. This solar cell includes a substrate (1), a back electrode (2), a p-type chalcopyrite semiconductor thin film (3), an n-type semiconductor thin film (4) formed so as to establish a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode (5). A material having a higher resistivity than the p-type chalcopyrite semiconductor (6) is formed between the p-type chalcopyrite semiconductor thin film (3) and the n-type semiconductor thin film (4). A thin film (6) made of this material may be formed by deposition from a solution.
摘要翻译： 使用黄铜矿半导体的太阳能电池并减少pn结的结界面上的缺陷密度。 该太阳能电池包括基板（1），背面电极（2），p型黄铜矿半导体薄膜（3），形成为与p形成pn结的n型半导体薄膜（4） 型黄铜矿半导体薄膜和透明电极（5）。 在p型黄铜矿半导体薄膜（3）和n型半导体薄膜（4）之间形成具有比p型黄铜矿半导体（6）高的电阻率的材料。 由该材料制成的薄膜（6）可以通过从溶液中沉积而形成。
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公开(公告)号：EP1619728A1
公开(公告)日：2006-01-25
申请号：EP04726779.4
申请日：2004-04-09
IPC分类号： H01L31/072 , H01L31/032
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer.
摘要翻译： 提供一种包括具有黄铜矿晶体结构的化合物半导体的光吸收层并且具有优异特性如转换效率的太阳能电池。 太阳能电池包括第一电极层，第二电极层，介于第一电极层和第二电极层之间的p型半导体层，以及插入在p型半导体层和第二电极层之间的n型半导体层 电极层。 p型半导体层包括含有Ib族元素，IIIb族元素和VI族元素并具有黄铜矿结构的化合物半导体。 p型半导体层的带隙从n型半导体层侧单调增加到第一电极层侧。 n型半导体层侧的主面上的p型半导体层的带隙为1.08eV以上，第一电极层侧的主面上的p型半导体层的带隙为至少 1.17 eV。 在p型半导体层中，p型半导体层的厚度方向上的n型半导体层侧的第一区域和第一电极层侧的第二区域的带隙增加率彼此不同， 。
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8.发明公开
公开(公告)号：EP1517378A2
公开(公告)日：2005-03-23
申请号：EP04255683.7
申请日：2004-09-17
IPC分类号： H01L31/032 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： A semiconductor film has a composition in which a Group Ia element and a Group Vb element are added to a compound semiconductor with a chalcopyrite structure containing a Group Ib element, a Group IIIb element and a Group VIb element. This allows the provision of a semiconductor film whose carrier density can be controlled effectively. A solar cell (1) of the present invention includes: a substrate (11) and the semiconductor film of the present invention that is provided as a light-absorption layer (13) on the substrate (11). With this configuration, a light-absorption layer whose carrier density can be controlled effectively can be provided, so that a solar cell having a high energy conversion efficiency can be provided.
摘要翻译： 一种半导体电影具有其中Ia族元素和第VB族元素被添加到化合物半导体具有黄铜矿结构的含IB族元素，IIIB族元素和VIB族元素的组合物。 这允许半导体薄膜其载流子密度可以有效地控制的佣金。 本发明的太阳能电池（1）包括：基板（11）和本发明的半导体电影并作为在基板（11）的光吸收层（13）提供。 根据该构成，光吸收层，其载流子密度可以有效地控制可被提供，所以没有可以提供具有高的能量转换效率的太阳能电池。
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公开(公告)号：EP1460692A2
公开(公告)日：2004-09-22
申请号：EP04005994.1
申请日：2004-03-12
IPC分类号： H01L31/0336 , H01L31/032
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.
摘要翻译： 本发明的目的是提供一种太阳能电池及其制造方法，其包括具有Zn，Mg和O的层，并且可以实现效率的提高。 太阳能电池包括第一电极层，第二电极层，设置在第一电极层和第二电极层之间的p型半导体层，以及设置在第二电极层和p型半导体层之间的层A， 层A包括Zn，Mg，O以及从Ca，Sr，Ba，Al，In和Ga中选择的至少一种元素M，并且由于从第二电极层侧入射的光产生光电动势。
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