发明公开
- 专利标题： Method of making a self-aligned contact
- 专利标题（中）： 制作自对准接触的方法
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申请号： EP97310455.7申请日： 1997-12-22
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公开(公告)号： EP0849785A2公开(公告)日： 1998-06-24
- 发明人: McAnally, Peter S. , McKee, Jeffrey Alan , Anderson, Dirk Noel
- 申请人： Texas Instruments Incorporated
- 申请人地址： P.O. Box 655474, Mail Station 3999 Dallas, Texas 75265 US
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： P.O. Box 655474, Mail Station 3999 Dallas, Texas 75265 US
- 代理机构： Holt, Michael
- 优先权： US33134P 19961220
- 主分类号： H01L21/60
- IPC分类号： H01L21/60
摘要：
A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).
公开/授权文献
- EP0849785A3 Method of making a self-aligned contact 公开/授权日：1998-12-30
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