发明公开
- 专利标题: High frequency transistor oscillator system
- 专利标题(中): Hochfrequenz三极管Oszillatorsystem
-
申请号: EP97121984.5申请日: 1997-12-12
-
公开(公告)号: EP0851572A1公开(公告)日: 1998-07-01
- 发明人: Morrisroe, Peter J. , Gagne, Peter H.
- 申请人: The Perkin-Elmer Corporation
- 申请人地址: 761 Main Avenue Norwalk, Connecticut 06859-0199 US
- 专利权人: The Perkin-Elmer Corporation
- 当前专利权人: The Perkin-Elmer Corporation
- 当前专利权人地址: 761 Main Avenue Norwalk, Connecticut 06859-0199 US
- 代理机构: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权: US775435 19961231
- 主分类号: H03B5/12
- IPC分类号: H03B5/12 ; H05H1/30
摘要:
In a high frequency oscillator system a series oscillator circuit includes a load coil inductively coupled with a plasma generator. A capacitance is in series with the coil between the drain and source terminals of a transistor. A capacitive or inductive feedback responsive to the oscillation is connected to the gate terminal of the transistor. In another embodiment two sections of a series circuit are connected by the load coil, each section including a separate transistor. A first capacitance is connected between the coil and the first transistor drain, and a second capacitance is connected between the coil and the second transistor drain. A first capacitive feedback is connected between the second section and the first transistor gate, and a second capacitive feedback is connected between the first section and the second transistor gate. For alternative inductive feedback, one feedback is connected between the first section and the first transistor gate, and the other is connected between the second section and the second transistor gate.
公开/授权文献
- EP0851572B1 High frequency transistor oscillator system 公开/授权日:2002-11-20
信息查询