发明公开
- 专利标题: Charged-particle-beam exposure apparatus
- 专利标题(中): 使用带电粒子曝光装置
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申请号: EP98101410.3申请日: 1998-01-27
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公开(公告)号: EP0856872A3公开(公告)日: 2000-12-13
- 发明人: Morita,Kenji, Nikon Corporation , Nakasuji,Mamoru, Nikon Corporation
- 申请人: NIKON CORPORATION
- 申请人地址: Fuji Building, 2-3 Marunouchi 3-chome, Chiyoda-ku Tokyo 100-0005 JP
- 专利权人: NIKON CORPORATION
- 当前专利权人: NIKON CORPORATION
- 当前专利权人地址: Fuji Building, 2-3 Marunouchi 3-chome, Chiyoda-ku Tokyo 100-0005 JP
- 代理机构: Meddle, Alan Leonard
- 优先权: JP1261497 19970127
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; G03F7/20
摘要:
Apparatus and methods are disclosed for increasing the throughput of a charged-particle-beam exposure apparatus while maintaining alignment and exposure accuracy. The apparatus comprises a main chamber where exposure of sensitive substrates is performed using a charged-particle beam. At least one transport system moves and prepares the sensitive substrates for exposure in the main chamber. The transport system comprises at least one chamber. An evacuation device and a venting device are used to vary the pressure in the chambers as required. At least one switching valve is situated between the main chamber and a chamber in the transport system to isolate these chambers from one another. A flexible conduit connects the main chamber to the transport system. The apparatus and methods have especial utility for the processing of sub-micron level semiconductors.
公开/授权文献
- EP0856872A2 Charged-particle-beam exposure apparatus 公开/授权日:1998-08-05
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