发明公开
EP0880168A2 System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
失效
以除去的方法和装置用于铜表面的选择性的原位清洗铜的氧化物
- 专利标题： System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
- 专利标题（中）： 以除去的方法和装置用于铜表面的选择性的原位清洗铜的氧化物
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申请号： EP98304002.3申请日： 1998-05-20
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公开(公告)号： EP0880168A2公开(公告)日： 1998-11-25
- 发明人: Nguyen, Tue , Charneski, Lawrence J. , Evans, David R. , Sheng, Teng Hsu
- 申请人： Sharp Kabushiki Kaisha , SHARP MICROELECTRONICS TECHNOLOGY, INC.
- 申请人地址： 22-22, Nagaike-cho, Abeno-ku Osaka 545 JP
- 专利权人： Sharp Kabushiki Kaisha,SHARP MICROELECTRONICS TECHNOLOGY, INC.
- 当前专利权人： Sharp Kabushiki Kaisha,SHARP MICROELECTRONICS TECHNOLOGY, INC.
- 当前专利权人地址： 22-22, Nagaike-cho, Abeno-ku Osaka 545 JP
- 代理机构： West, Alan Harry
- 优先权： US861808 19970522
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; H01L21/768
摘要：
A system and method are provided for selectively etching metal, preferably copper surfaces free of oxides in preparation for the deposition of an interconnecting metallic material. Metal oxides are removed with β-diketones, preferably Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively with copper oxides. The by-products are also volatile for removal from the system under reduced pressure. The procedure is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in situ cleaning permits a minimum amount of copper oxide to reform before the deposition of the overlying metal, permitting formation of a highly conductive electrical interconnection.
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