公开(公告)号：EP0880168A3

公开(公告)日：1999-12-15

申请号：EP98304002.3

申请日：1998-05-20

申请人： Sharp Kabushiki Kaisha ,  SHARP MICROELECTRONICS TECHNOLOGY, INC.

发明人： Nguyen, Tue ,  Charneski, Lawrence J. ,  Evans, David R. ,  Sheng, Teng Hsu

IPC分类号： H01L21/321 ,  H01L21/768

CPC分类号： C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/76838

摘要： A system and method are provided for selectively etching metal, preferably copper surfaces free of oxides in preparation for the deposition of an interconnecting metallic material. Metal oxides are removed with β-diketones, preferably Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively with copper oxides. The by-products are also volatile for removal from the system under reduced pressure. The procedure is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in situ cleaning permits a minimum amount of copper oxide to reform before the deposition of the overlying metal, permitting formation of a highly conductive electrical interconnection.

公开(公告)号：EP0880168A2

公开(公告)日：1998-11-25

申请号：EP98304002.3

申请日：1998-05-20

申请人： Sharp Kabushiki Kaisha ,  SHARP MICROELECTRONICS TECHNOLOGY, INC.

发明人： Nguyen, Tue ,  Charneski, Lawrence J. ,  Evans, David R. ,  Sheng, Teng Hsu

IPC分类号： H01L21/321 ,  H01L21/768

CPC分类号： C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/76838

摘要： A system and method are provided for selectively etching metal, preferably copper surfaces free of oxides in preparation for the deposition of an interconnecting metallic material. Metal oxides are removed with β-diketones, preferably Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively with copper oxides. The by-products are also volatile for removal from the system under reduced pressure. The procedure is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in situ cleaning permits a minimum amount of copper oxide to reform before the deposition of the overlying metal, permitting formation of a highly conductive electrical interconnection.

摘要翻译： 提供了用于选择性地蚀刻金属，游离在用于互连金属材料的沉积制备氧化物的优选的铜表面的系统和方法。 金属氧化物与β-二酮，优选Hhfac除去。 所述Hhfac被输送到系统中以蒸气形式，并且与铜的氧化物几乎全部发生反应。 的副产物，因此易失性在减压下从系统中除去。 该过程是很容易适应大多数IC工艺体系，它可以被传导到无氧的环境，而不会从处理室中去除所述IC的。 原位清洁允许上覆金属的沉积之前改革氧化铜的最小量，从而允许形成高度导电的电互连的。

公开(公告)号：EP1306895A2

公开(公告)日：2003-05-02

申请号：EP02021751.9

申请日：2002-09-25

申请人： Sharp Kabushiki Kaisha

发明人： Wei-Wei, Zhuang ,  Fengyan, Zhang ,  Sheng, Teng Hsu ,  Tingkai, Li

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  B08B3/12 ,  Y10S134/902

摘要： A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200°C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.

公开(公告)号：EP1306895A3

公开(公告)日：2004-07-28

申请号：EP02021751.9

申请日：2002-09-25

申请人： Sharp Kabushiki Kaisha

发明人： Wei-Wei, Zhuang ,  Fengyan, Zhang ,  Sheng, Teng Hsu ,  Tingkai, Li

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  B08B3/12 ,  Y10S134/902

摘要： A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200°C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.

摘要翻译： 一种在硅晶片上清洗金属氧化物薄膜的方法，包括将晶片浸入有机溶剂中; 在氮气气氛中干燥晶片; 并在部分真空下，在约200℃的温度下，在氧气氛中从晶片上剥离任何光致抗蚀剂。也可以通过浸入极性有机溶剂中并将晶片浸入溶剂中使其超声波清洗晶片。