发明公开
- 专利标题： ELEKTRONISCHE EINRICHTUNG ZUM SCHALTEN ELEKTRISCHER STRÖME, FÜR HOHE SPERRSPANNUNGEN UND MIT GERINGEN DURCHLASSVERLUSTEN
- 专利标题（英）： Electronic means, in particular for switching electronic currents, for high off-state voltages and with on-state power losses
- 专利标题（中）： 电子装置开关电器流通过高压和LOCK具有低路径损耗
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申请号： EP97915312申请日： 1997-02-27
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公开(公告)号： EP0886883A1公开(公告)日： 1998-12-30
- 发明人: MITLEHNER HEINZ , STOISIEK MICHAEL
- 申请人： SIEMENS AG
- 专利权人： SIEMENS AG
- 当前专利权人： SIEMENS AG
- 优先权： DE19610135 1996-03-14
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L27/04 ; H01L27/085 ; H01L29/12 ; H01L29/20 ; H01L29/24 ; H01L29/739 ; H01L29/78 ; H01L29/808 ; H01L29/866 ; H01L27/06 ; H01L29/772
摘要：
A p-n junction (7) is connected between two terminals (2, 3) and comprises between two semiconductor regions (6, 8) a semiconductor with a breakdown field intensity of at least 106 V/cm. A channel region (9) adjoining the p-n junction is provided in a first one of the two semiconductor regions and is connected in series, between the two terminals, to a silicon device (4). The depletion zone (70) of the p-n junction bears the off-state voltage when the silicon device is off-state. A MOSFET is preferably used as the silicon device.
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