A device forming a high energy resolution integrated semiconductor ΔE-E detector telescope is disclosed, in which is formed a very thin ΔE detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This ΔE-E detector provides a well supported very thin ΔE detector for high resolution. The very thin ΔE detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.