-
公开(公告)号：EP0896738B1
公开(公告)日：2005-06-15
申请号：EP97916687.3
申请日：1997-03-20
IPC分类号： H01L31/118 , H01L25/04
CPC分类号： H01L25/043 , H01L31/118 , H01L2924/0002 , H01L2924/00
摘要： A device forming a high energy resolution integrated semiconductor DELTA E-E detector telescope is disclosed, in which is formed a very thin DELTA E detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This DELTA E-E detector provides a well supported very thin DELTA E detector for high resolution. The very thin DELTA E detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.
-
公开(公告)号：EP0896738A1
公开(公告)日：1999-02-17
申请号：EP97916687.0
申请日：1997-03-20
CPC分类号： H01L25/043 , H01L31/118 , H01L2924/0002 , H01L2924/00
摘要： A device forming a high energy resolution integrated semiconductor ΔE-E detector telescope is disclosed, in which is formed a very thin ΔE detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This ΔE-E detector provides a well supported very thin ΔE detector for high resolution. The very thin ΔE detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.
-
搜索结果
2 条记录 (耗时 0.009 秒)
