发明授权
- 专利标题: STREIFENDETEKTOR
- 专利标题(英): Strip detector
- 专利标题(中): 条探测器
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申请号: EP97925853.0申请日: 1997-05-20
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公开(公告)号: EP0902982B1公开(公告)日: 2002-10-02
- 发明人: KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
- 申请人: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. , KEMMER, Josef, Dr.
- 申请人地址: Hofgartenstrasse 2 80539 München DE
- 专利权人: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.,KEMMER, Josef, Dr.
- 当前专利权人: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.,KEMMER, Josef, Dr.
- 当前专利权人地址: Hofgartenstrasse 2 80539 München DE
- 代理机构: Münich, Wilhelm, Dr.
- 优先权: DE19620081 19960520
- 国际公布: WO97044831 19971127
- 主分类号: H01L31/115
- IPC分类号: H01L31/115 ; H01L31/118
摘要:
The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
公开/授权文献
- EP0902982A1 STREIFENDETEKTOR 公开/授权日:1999-03-24
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