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41 条记录 (耗时 0.011 秒)

    Method of manufacturing a radiation detector
    2.
    发明公开
    Method of manufacturing a radiation detector 审中-公开
    制造辐射探测器的方法

    公开(公告)号：EP2346095A2

    公开(公告)日：2011-07-20

    申请号：EP11150672.1

    申请日：2011-01-12

    申请人： FEI COMPANY

    发明人： Nanver, Lis ,  Scholtes, Thomas ,  Sakic, Agata ,  Van Veen, Gerard ,  Kooijman, Cees

    IPC分类号： H01L31/118 ,  H01L31/0224

    CPC分类号： H01L31/1185 ,  H01J37/244 ,  H01L31/022408 ,  H01L31/105

    摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope.
    The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode.
    The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.

    摘要翻译： 本发明公开了一种制造辐射探测器的方法，用于探测例如 200 eV电子。 这使得检测器适合于例如 在扫描电子显微镜中使用。 探测器是一个PIN光电二极管，带有一层薄的纯硼，连接到p +扩散层。 硼层连接到具有铝栅格的电极以在硼层的每个给定点与电极之间形成低电阻路径。 本发明解决了在硼层上形成铝栅格而不损坏硼层。 为此，通过用铝层完全覆盖硼层然后通过蚀刻去除部分铝层来形成铝的栅格，该蚀刻包括干法蚀刻的第一步骤（304），干法蚀刻的步骤 限定栅格，但在硼层的一部分上留下薄铝层以暴露，接着进行湿法蚀刻的第二步骤（308），湿法蚀刻的步骤将硼从硼层的一部分完全去除至步骤 被暴露。

    Light-tight silicon radiation detector
    3.
    发明公开
    Light-tight silicon radiation detector 审中-公开
    Lichtdichter Silizium-Strahlungsdetektor

    公开(公告)号：EP2242115A2

    公开(公告)日：2010-10-20

    申请号：EP10160212.6

    申请日：2010-04-16

    申请人： Canberra Industries, Inc.

    发明人： Evrard, Olivier ,  Keters, Marijke

    IPC分类号： H01L31/118 ,  H01L31/0216

    CPC分类号： H01L31/118 ,  H01L31/0203 ,  H01L31/022408 ,  H01L31/028 ,  Y02E10/547

    摘要： A light-tight silicon radiation detector. The detector utilizes a silicon substrate (402) having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act as the rectifying electrode (404) and as an entrance window for the sensitive volume. A first layer of titanium nitride (406) is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.

    摘要翻译： 一种不透光的硅辐射探测器。 检测器利用具有敏感体积的硅衬底（402）用于电离辐射的检测以及电离辐射可以通过其进入的整流接触或电极。 扩散或硼注入的p +层可以用作整流电极（404）和用作敏感体积的入口窗口。 第一层氮化钛（406）沉积在入口窗口上，以防止光进入敏感体积并增加检测器的耐磨损和耐腐蚀性。 或者，氮化钛层可以直接沉积在硅衬底上，所述层用作表面阻挡层或肖特基势垒整流接触层。 可以在背面接触层上沉积一层氮化钛，其中该氮化钛层用作欧姆接触。 第二层可以进一步用作用于表面安装连接的导电接触。

    RÖNTGENDETEKTORMODUL MIT KOLLIMATOR
    4.
    发明授权
    RÖNTGENDETEKTORMODUL MIT KOLLIMATOR 有权
    与准直器射线检测器模块

    公开(公告)号：EP1913645B1

    公开(公告)日：2009-01-21

    申请号：EP06776713.7

    申请日：2006-08-09

    申请人： Deutsches Elektronen-Synchrotron DESY

    发明人： HANSEN, Karsten ,  VENZMER, Alexander

    IPC分类号： H01L31/117 ,  H01L31/118 ,  H01L31/08 ,  H01L27/146 ,  G01T1/24 ,  G01T1/29

    CPC分类号： H01L27/14618 ,  H01L27/14623 ,  H01L27/14659 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates an x-ray detector module comprising a plurality of silicium-drift detector cells which are arranged next to each other on a sensor chip. Said sensor chip is arranged in a recess of a frame-shaped base support, such that the sensitive chip surface lies in the opening of said frame-shaped base support. The aim of the invention is to improve the signal/base ratio. As a result, a mask (10) is fixed to the side of the base support (2) which is opposite to the recess, said mask covering the outer edge areas of external silicium-drift detector cells of the sensor chip (8) and ridges above the sensor chip (8) protrude into the opening of the base support (2). The ridges are arranged in such a manner that they cover the defining strips which are adjacent to the silicum drift detector cells, in order to protect the external edge areas and the defining strips which are covered by the mask (10) counter to the incident x-ray photons.

    INTEGRATED dE-E DETECTOR TELESCOPE
    5.
    发明授权
    INTEGRATED dE-E DETECTOR TELESCOPE 失效
    集成了去-E探测器望远镜

    公开(公告)号：EP0896738B1

    公开(公告)日：2005-06-15

    申请号：EP97916687.3

    申请日：1997-03-20

    申请人： Pettersson, Sture ,  Thungström, Göran ,  Whitlow, Harry

    发明人： Pettersson, Sture ,  Thungström, Göran ,  Whitlow, Harry

    IPC分类号： H01L31/118 ,  H01L25/04

    CPC分类号： H01L25/043 ,  H01L31/118 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device forming a high energy resolution integrated semiconductor DELTA E-E detector telescope is disclosed, in which is formed a very thin DELTA E detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This DELTA E-E detector provides a well supported very thin DELTA E detector for high resolution. The very thin DELTA E detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.

    DETECTOR, METHOD FOR MANUFACTURING A DETECTOR AND IMAGING APPARATUS
    9.
    发明公开
    DETECTOR, METHOD FOR MANUFACTURING A DETECTOR AND IMAGING APPARATUS 审中-公开
    检测器，一种用于制造探测器及摄像装置

    公开(公告)号：EP2494375A2

    公开(公告)日：2012-09-05

    申请号：EP10768968.9

    申请日：2010-10-26

    申请人： Finphys OY

    发明人： ORAVA, Risto ,  SCHULMAN, Tom

    IPC分类号： G01T3/08 ,  H01L31/115 ,  H01L31/118

    摘要： A detector (100) for detecting neutrons includes a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to the interactions with neutrons. The detector also includes a first semiconductor element (101) being coupled with the neutron reactive material (102) and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. The thickness of the first semiconductor element (101) is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.

    Light-tight silicon radiation detector
    10.
    发明公开
    Light-tight silicon radiation detector 审中-公开
    遮光硅辐射检测器

    公开(公告)号：EP2242115A3

    公开(公告)日：2011-09-28

    申请号：EP10160212.6

    申请日：2010-04-16

    申请人： Canberra Industries, Inc.

    发明人： Evrard, Olivier ,  Keters, Marijke

    IPC分类号： H01L31/118 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0203 ,  H01L31/0216

    CPC分类号： H01L31/118 ,  H01L31/0203 ,  H01L31/022408 ,  H01L31/028 ,  Y02E10/547

    摘要： A light-tight silicon radiation detector. The detector utilizes a silicon substrate (402) having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act as the rectifying electrode (404) and as an entrance window for the sensitive volume. A first layer of titanium nitride (406) is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections.