发明公开
- 专利标题： Buffer layer for improving control of layer thickness
- 专利标题（中）： 缓冲层用于改善层厚控制
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申请号： EP98307803.1申请日： 1998-09-25
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公开(公告)号： EP0908938A2公开(公告)日： 1999-04-14
- 发明人: Gruening, Ulrike , Beintner, Jochen , Radens, Carl
- 申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
- 申请人地址： Wittelsbacherplatz 2 80333 München DE
- 专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人地址： Wittelsbacherplatz 2 80333 München DE
- 代理机构： O'Connell, David Christopher
- 优先权： US938196 19970926
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/314 ; H01L21/033 ; H01L21/762
摘要：
A pad layer disposed on a semiconductor substrate 102 and a buffer layer 108 disposed within the pad layer such that the pad layer is divided into a dielectric layer 106 below the buffer layer and a mask layer 110 above the buffer layer. A method of forming layers with uniform planarity and thickness on a semiconductor chip includes the steps of providing a substrate having a thermal pad 106 formed thereon, forming a dielectric layer 106 on the thermal pad, forming a buffer layer 108 on the dielectric layer wherein the buffer layer is made from a different material than the dielectric layer and forming a mask layer 110 on the buffer layer wherein the buffer layer is made from a different material than the mask layer.
公开/授权文献
- EP0908938B1 Buffer layer for improving control of layer thickness 公开/授权日：2002-12-04
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