发明公开
EP0929898A1 MEMORY BLOCK SELECT USING MULTIPLE WORD LINES TO ADDRESS A SINGLE MEMORY CELL ROW
失效
存储块选使用多个字线的寻址单个存储单元LINE
- 专利标题: MEMORY BLOCK SELECT USING MULTIPLE WORD LINES TO ADDRESS A SINGLE MEMORY CELL ROW
- 专利标题(中): 存储块选使用多个字线的寻址单个存储单元LINE
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申请号: EP97945064.0申请日: 1997-09-29
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公开(公告)号: EP0929898A1公开(公告)日: 1999-07-21
- 发明人: WENDELL, Dennis, Lee , HOLST, John, Christian
- 申请人: ADVANCED MICRO DEVICES INC.
- 申请人地址: One AMD Place, P.O. Box 3453 Sunnyvale, California 94088-3453 US
- 专利权人: ADVANCED MICRO DEVICES INC.
- 当前专利权人: ADVANCED MICRO DEVICES INC.
- 当前专利权人地址: One AMD Place, P.O. Box 3453 Sunnyvale, California 94088-3453 US
- 代理机构: Wright, Hugh Ronald
- 优先权: US19960027329P 19960930; US19970938048 19970926
- 国际公布: WO1998014950 19980409
- 主分类号: G06F12
- IPC分类号: G06F12 ; G11C7 ; G11C8 ; G11C11 ; G11C29 ; H03K3 ; H03K5 ; H03L7
摘要:
A highly suitable power conservation technique involves extending multiple word lines over a memory array row and connecting a portion of the memory cells of the memory array row to each of the word lines. Power is supplied only to the portion of the memory cells that is accessed, eliminating the static power consumption of the non-accessed memory cells. By connecting multiple word lines to select a portion of a memory row, a column address of the memory is mapped into a row decode space. Multiple metal layers in a complex integrated circuit may be exploited to form cache block select lines using multiple word lines per cell row. A storage includes a plurality of storage cells arranged in an array of rows and columns, a plurality of bit lines connecting the array of storage cells into columns, and a plurality of word lines connecting the array of storage cells into rows. The plurality of word lines include multiple word lines for a single row of the plurality of rows so that multiple portions of the storage cells in the single row are addressed by corresponding multiple word lines.
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