发明公开
EP0940853A2 DRAM trench capacitor cell and method of fabricating the same
审中-公开
DRAM-Grabenkondensator-Zelle und Verfahren zur Herstellung derselben
- 专利标题： DRAM trench capacitor cell and method of fabricating the same
- 专利标题（中）： DRAM-Grabenkondensator-Zelle und Verfahren zur Herstellung derselben
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申请号： EP99102356.5申请日： 1999-02-06
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公开(公告)号： EP0940853A2公开(公告)日： 1999-09-08
- 发明人: Gruening, Ulrike , Beintner, Jochen , Joachim, Hans O.
- 申请人： SIEMENS AKTIENGESELLSCHAFT
- 申请人地址： Wittelsbacherplatz 2 80333 München DE
- 专利权人： SIEMENS AKTIENGESELLSCHAFT
- 当前专利权人： SIEMENS AKTIENGESELLSCHAFT
- 当前专利权人地址： Wittelsbacherplatz 2 80333 München DE
- 代理机构： Patentanwälte Westphal, Mussgnug & Partner
- 优先权： US34519 19980304
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
A pair of memory cells for use in a DRAM are formed in a monocrystalline bulk portion of a silicon wafer by first forming a pair of vertical trenches spaced apart by a bulk portion of the wafer. After a dielectric layer is formed over the walls of each trench, the trenches are each filled with polycrystalline silicon. By a pair of recess forming and recess filling steps there is formed at the top of each trench a silicon region that was grown epitaxially with the intermediate bulk portion. Each epitaxial region is made to serve as the body of a separate transistor having its drain in the lower polysilicon fill of a trench, and its source in the monocrystalline bulk intermediate between the two epitaxial regions. The lower polysilicon fill of each trench is also made to serve as the storage node of the capacitor of each cell, with the bulk serving as the other plate of the capacitor.
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