发明公开
EP0947882A2 X-ray reduction projection exposure system of reflection type
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Verkleinerndes Projektionsbelichtungssystem des ReflexionstypsfürRöntgenstrahlung
- 专利标题: X-ray reduction projection exposure system of reflection type
- 专利标题(中): Verkleinerndes Projektionsbelichtungssystem des ReflexionstypsfürRöntgenstrahlung
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申请号: EP99201981.0申请日: 1987-07-08
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公开(公告)号: EP0947882A2公开(公告)日: 1999-10-06
- 发明人: Suzuki, Masayuki , Mochizuki, Noritaka , Minami, Setsuo , Ogura, Shigetaro , Fukuda, Yasuaki , Watanabe, Yutaka , Kawai, Yasuo , Kariya, Takao
- 申请人: CANON KABUSHIKI KAISHA
- 申请人地址: 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 代理机构: Beresford, Keith Denis Lewis
- 优先权: JP16306886 19860711; JP14861187 19870615; JP14861287 19870615; JP14861387 19870615; JP14861487 19870615; JP14861587 19870615; JP14861687 19870615
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale.
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