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    Optical system, exposure apparatus using the same and device manufacturing method
    1.
    发明公开
    Optical system, exposure apparatus using the same and device manufacturing method 有权
    光学系统，使用其的曝光装置及装置制造方法

    公开(公告)号：EP1569036A2

    公开(公告)日：2005-08-31

    申请号：EP05251193.8

    申请日：2005-02-28

    申请人： CANON KABUSHIKI KAISHA

    发明人： Suzuki, Masayuki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70891 ,  G03F7/70958

    摘要： An optical system includes first and second optical systems, a first controller for controlling a temperature of the first optical system to a first temperature, and a second controller for controlling a temperature of the second optical system to a second temperature different from the first temperature.

    摘要翻译： 光学系统包括第一和第二光学系统，用于将第一光学系统的温度控制到第一温度的第一控制器以及用于将第二光学系统的温度控制到与第一温度不同的第二温度的第二控制器。

    X-ray reduction projection exposure system of reflection type
    2.
    发明公开
    X-ray reduction projection exposure system of reflection type 无效
    Verkleinerndes Projektionsbelichtungssystem des ReflexionstypsfürRöntgenstrahlung

    公开(公告)号：EP0947882A2

    公开(公告)日：1999-10-06

    申请号：EP99201981.0

    申请日：1987-07-08

    申请人： CANON KABUSHIKI KAISHA

    发明人： Suzuki, Masayuki ,  Mochizuki, Noritaka ,  Minami, Setsuo ,  Ogura, Shigetaro ,  Fukuda, Yasuaki ,  Watanabe, Yutaka ,  Kawai, Yasuo ,  Kariya, Takao

    IPC分类号： G03F7/20

    CPC分类号： B82Y10/00 ,  G02B17/0636 ,  G03F7/2039 ,  G03F7/70033 ,  G03F7/70233 ,  G03F7/7025 ,  G03F7/70691 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70883 ,  G03F7/70891

    摘要： An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale.

    摘要翻译： 一种X射线曝光设备包括：用于保持具有用于电路制造的多层反射图案的反射型掩模（MS）的平台（1），用于保持待曝光的晶片（WF）的平台（50） 以及设置在掩模台和晶片台之间的反射降低成像系统，包括反射镜装置，其包含多个涂覆有多层膜的弯曲反射镜（M1，M2，M3），用于接收 来自掩模（MS）的X射线并将其引导到晶片（WF），以使X射线以较小的比例将晶片暴露于掩模的图案。

    Scanning optical device with aberration compensation feature
    4.
    发明公开
    Scanning optical device with aberration compensation feature 失效
    具有像差补偿功能的扫描光学装置

    公开(公告)号：EP0407988A2

    公开(公告)日：1991-01-16

    申请号：EP90113183.9

    申请日：1990-07-10

    申请人： CANON KABUSHIKI KAISHA

    发明人： Suzuki, Masayuki ,  Hoshino, Osamu ,  Shiraiwa, Yoshinobu ,  Minoura, Kazuo

    IPC分类号： G02B26/10

    CPC分类号： G02B26/127 ,  G02B27/0031

    摘要： A scanning optical device for scanning a material to be scanned with beams emitted from a light source (1) thereof, has a storage device for storing information relating to the quantity of deviation of a scanning optical system. The convergent position of the beams is adjustable in the direction of the optical axis by at least partially controlling the elements of the scanning optical system in accordance with information relating the quantity of deviation supplied by the storage device. The quantity of deviation such as an image distortion of the scanning optical system can be compensated by a simple structure. Therefore, a recording device or reading device employing the scanning optical system exhibiting high resolution, low cost and a capability of preventing deterioration in the gradation expression can be realized.

    摘要翻译： 一种用于利用从其光源（1）发射的光束来扫描待扫描材料的​​扫描光学装置具有用于存储与扫描光学系统的偏差量有关的信息的存储装置。 根据与由存储装置提供的偏差量有关的信息，通过至少部分地控制扫描光学系统的元件，可以在光轴的方向上调节光束的会聚位置。 扫描光学系统的图像失真等偏差量可以通过简单的结构来补偿。 因此，可以实现采用呈现高分辨率，低成本和防止灰度表现恶化的扫描光学系统的记录装置或读取装置。

    X-ray exposure apparatus
    5.
    发明公开
    X-ray exposure apparatus 失效
    Röntgenstrahl-Belichtungsapparat。

    公开(公告)号：EP0389259A2

    公开(公告)日：1990-09-26

    申请号：EP90303031.0

    申请日：1990-03-21

    申请人： CANON KABUSHIKI KAISHA

    发明人： Suzuki, Masayuki ,  Uno, Shinichiro

    IPC分类号： G03F7/20

    CPC分类号： G03F7/702

    摘要： An X-ray exposure apparatus includes an X-ray source; and a directing optical system for directing an X-ray beam from the X-ray source to a surface to be exposed, the directing optical system including a mirror having a reflection surface of a curvature radius R with respect to a predetermined sectional plane, for reflecting the X-ray beam and for expanding the diameter thereof with respect to the sectional plane; wherein the mirror satisfies the following conditions:
    R = (2d₁d₂σ′)/{[Δ-(d₁+d₂)σ′]·α}
    where
    d₁: the distance from the emission point of the X-ray source to the center of effective X-ray beam diameter on the reflection surface;
    d₂: the distance from the center of effective X-­ray beam diameter on the reflection surface to the center of effective X-ray beam diameter on the surface to be exposed;
    α: the angle defined at the center of effective X-ray beam diameter on the reflection surface, between the X-ray beam and the reflection surface;
    σ′: a standard deviation of a distribution of intensities of the rays having different emission angles at the sectional plane, at the gravity center wavelength of the X-ray beam from the X-ray source;
    Δ: 0.43a≦ Δ ≦4.0a; and
    a : the length of the surface to be exposed, with respect to the sectional plane.

    摘要翻译： X射线曝光装置包括X射线源; 以及用于将来自X射线源的X射线束引导到要被暴露的表面的引导光学系统，所述引导光学系统包括具有相对于预定截面的曲率半径R的反射表面的反射镜，用于 反射X射线束并相对于截面扩大其直径; 其中反射镜满足以下条件：R =（2d1d2 sigma min）/ {[DELTA-（d1 + d2）sigma min]。 alpha}其中d1：从X射线源的发射点到反射面上的有效X射线束直径的中心的距离; d2：从有效X射线光束直径在反射面到中心的距离，要曝光的表面上的有效X射线束直径的中心; α：在X射线束和反射面之间的反射面上的有效X射线束直径中心的角度; sigma min：来自X射线源的X射线束的重心中心波长处的剖面上具有不同发射角的射线的强度分布的标准偏差; DELTA：0.43a

    A reflection type mask
    6.
    发明公开
    A reflection type mask 失效
    Reflexionsmaske。

    公开(公告)号：EP0279670A2

    公开(公告)日：1988-08-24

    申请号：EP88301367.4

    申请日：1988-02-18

    申请人： CANON KABUSHIKI KAISHA

    发明人： Ikeda, Tsutomu ,  Watanabe, Yutaka ,  Suzuki, Masayuki ,  Hayashida, Masami ,  Fukuda, Yasuaki ,  Ogura, Shigetaro ,  Iizuka, Takashi ,  Niibe, Masahito

    IPC分类号： G03F1/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/58 ,  G03F7/70033 ,  G03F7/70233 ,  G03F7/70283 ,  G03F7/70875 ,  G03F7/70958

    摘要： A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.

    摘要翻译： 公开了一种可用于通过使用软X射线在半导体晶片上印刷图案的反射型掩模。 考虑到布拉格衍射和菲涅尔反射，通过分层折射率不同的材料形成在基板上的多层膜形成反射表面。 在反射面上形成非反射部分，以提供所需的图案。 或者，包括多层结构的图案可以形成在非反射基板上。 本发明的掩模确保高对比度的图案印刷。