发明公开
- 专利标题: Method and apparatus for plasma deposition
- 专利标题(中): 等离子体沉积的方法和设备
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申请号: EP99119093.5申请日: 1992-05-08
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公开(公告)号: EP0969120A2公开(公告)日: 2000-01-05
- 发明人: Cann, Gordon L. , Shepard, Cecil B., Jr. , McKevitt, Frank L.
- 申请人: CELESTECH, INC.
- 申请人地址: 14 Mason Street Irvine, CA 92178 US
- 专利权人: CELESTECH, INC.
- 当前专利权人: CELESTECH, INC.
- 当前专利权人地址: 14 Mason Street Irvine, CA 92178 US
- 代理机构: Skone James, Robert Edmund
- 优先权: US698538 19910510; US698446 19910510
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; C23C16/44 ; C23C16/26
摘要:
The disclosure is directed to a plasma jet deposition method and apparatus for depositing a substance, such as synthetic diamond. A plasma beam (225) containing constituents of the substance to be deposited is produced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substrate is deposited on the surface. The substrate in a plasma jet deposition system can be provided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610,620,630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition.
公开/授权文献
- EP0969120B1 Method for plasma deposition 公开/授权日:2003-07-30
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