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发明公开
EP0989609A1 Multilevel Interconnect Structure 有权
Verbindungsstruktur in mehreren Ebenen

Multilevel Interconnect Structure
摘要：
The integrated device comprises, in combination: a first conductive region (6); a first insulating region (7) of dielectric material, covering the first conductive region; a first through region (15) of electrically conductive material, extending inside the first insulating region (7), and in direct electrical contact with the first conductive region (6); a second conductive region (10a), arranged above the first insulating region (7), in a position not aligned and not in contact with the first through region (15); a second insulating region (9) of dielectric material, covering the second conductive region (10a); a second through region (21) of electrically conductive material, extending inside the second insulating region (9) as far as the first through region (15), aligned and in direct electrical contact with the first through region; and a third conductive region (11a), arranged above the second insulating region (9), aligned and in direct electrical contact with the second through region (21).
摘要（中）：

该集成装置组合包括：第一导电区域（6）; 介电材料的第一绝缘区域（7），覆盖所述第一导电区域; 导电材料的第一通过区域（15），在所述第一绝缘区域（7）内延伸，并与所述第一导电区域（6）直接电接触; 布置在所述第一绝缘区域（7）上方的第二导电区域（10a）处于未对齐并且不与所述第一穿透区域（15）接触的位置; 介电材料的第二绝缘区域（9），覆盖所述第二导电区域（10a）; 在所述第二绝缘区域（9）的内部延伸至所述第一贯穿区域（15）的第二贯穿区域（21），其与所述第一贯穿区域对准并直接电接触; 以及布置在所述第二绝缘区域（9）上方的第三导电区域（11a），所述第三导电区域与所述第二贯穿区域（21）直接电接触。

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