发明公开
- 专利标题： Method of fabricating a film for solar cells
- 专利标题（中）： 一种用于制造用于太阳能电池的层的方法
-
申请号： EP99307955.7申请日： 1999-10-08
-
公开(公告)号： EP1017109A3公开(公告)日： 2000-10-25
- 发明人: Niki, Shigeru , Yamada, Akimasa , Fons, Paul , Oyanagi, Hiroyuki
- 申请人： Agency of Industrial Science and Technology of Ministry of International Trade and Industry
- 申请人地址： 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo JP
- 专利权人： Agency of Industrial Science and Technology of Ministry of International Trade and Industry
- 当前专利权人： Agency of Industrial Science and Technology of Ministry of International Trade and Industry
- 当前专利权人地址： 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo JP
- 代理机构： Smith, Norman Ian
- 优先权： JP28749498 19981009
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L31/032 ; H01L31/0336 ; H01L31/0272
摘要：
A method of fabricating Cuα(In x Ga 1-x )β(Se y S 1-y )γ films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cuα(In x Ga 1-x )β(Se y S 1-y )γ film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.
公开/授权文献
- EP1017109B1 Method of fabricating a film for solar cells 公开/授权日：2012-12-19
信息查询
IPC分类:
