发明公开
- 专利标题： Semiconductor device
- 专利标题（中）： Halbleiterbauelement
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申请号： EP00200833.2申请日： 2000-03-08
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公开(公告)号： EP1035575A2公开(公告)日： 2000-09-13
- 发明人: Okawa, Shigeaki , Ohkoda, Toshiyuki
- 申请人： Sanyo Electric Co., Ltd.
- 申请人地址： 5-5, Keihan-Hondori, 2-Chome Moriguchi City, Osaka 570-8677 JP
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： 5-5, Keihan-Hondori, 2-Chome Moriguchi City, Osaka 570-8677 JP
- 代理机构： Hynell, Magnus
- 优先权： JP6141599 19990309
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L23/522 ; H01L21/8249 ; H01L27/06 ; H01L29/808
摘要：
The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones.
A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 100∼5,000 Ω·cm.
A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 100∼5,000 Ω·cm.
公开/授权文献
- EP1035575A3 Semiconductor device 公开/授权日：2001-10-17
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